TY - JOUR
T1 - Novel 2,4-difluorophenyl-functionalized arylamine as hole-injecting/hole- transporting layers in organic light-emitting devices
AU - Li, Zhanfeng
AU - Wu, Zhaoxin
AU - Jiao, Bo
AU - Liu, Peng
AU - Wang, Dongdong
AU - Hou, Xun
PY - 2012/2/27
Y1 - 2012/2/27
N2 - Novel 2,4-difluorophenyl-functionalized triphenylamine and its dimer, namely tris(2′,4′-difluorobiphenyl-4-yl)-amine (3FT) and N 4,N 4,N 4′,N 4′-tetrakis- (2′,4′-difluorobiphenyl-4-yl)-biphenyl-4,4′-diamine (4FDT), have been synthesized and characterized. The device with the configuration of ITO/4FDT/Alq 3/LiF/Al yields maximum current efficiency of 4.3 cd/A. Moreover, with 4FDT as the hole-injecting layer, the maximum efficiency and luminance of the device was further improved to be 5.0 cd/A and 19 880 cd/m 2, respectively. The good performance of devices with 4FDT as HTL or HIL was attributed to the incorporation of the strong electron-withdrawing fluorinated substituents into the arylamine moiety, which reduced holes mobility of HTL and HIL and then balanced the injected carriers in devices.
AB - Novel 2,4-difluorophenyl-functionalized triphenylamine and its dimer, namely tris(2′,4′-difluorobiphenyl-4-yl)-amine (3FT) and N 4,N 4,N 4′,N 4′-tetrakis- (2′,4′-difluorobiphenyl-4-yl)-biphenyl-4,4′-diamine (4FDT), have been synthesized and characterized. The device with the configuration of ITO/4FDT/Alq 3/LiF/Al yields maximum current efficiency of 4.3 cd/A. Moreover, with 4FDT as the hole-injecting layer, the maximum efficiency and luminance of the device was further improved to be 5.0 cd/A and 19 880 cd/m 2, respectively. The good performance of devices with 4FDT as HTL or HIL was attributed to the incorporation of the strong electron-withdrawing fluorinated substituents into the arylamine moiety, which reduced holes mobility of HTL and HIL and then balanced the injected carriers in devices.
UR - https://www.scopus.com/pages/publications/84857237855
U2 - 10.1016/j.cplett.2011.12.025
DO - 10.1016/j.cplett.2011.12.025
M3 - 文章
AN - SCOPUS:84857237855
SN - 0009-2614
VL - 527
SP - 36
EP - 41
JO - Chemical Physics Letters
JF - Chemical Physics Letters
ER -