Nonvolatile resistive switching memory behavior in WO_x/BiFeO_y heterojunction based memristor

Memristors with a two-terminal structure are considered to be one of the most promising electronic devices capable of overcoming the Von Neumann bottleneck, which is highly anticipated in the post-Moore era and next-generation artificial intelligence applications. In this work, a memristive device was fabricated using a WO_x/BiFeO_y heterojunction as functional layer on F-doped SnO₂ (FTO) substrate by magnetron sputtering. The Ag/WO_x/BiFeO_y/FTO device exhibits enhanced bipolar nonvolatile resistive switching (RS) memory behavior compared with single-layer BiFeO_y-based memristors, which can meet the requirements of high-density information storage. By performing a comprehensive conductivity analysis on the current-voltage (I-V) curve, it was proposed a reasonable physical model to explain the RS memory behavior of the device based on space-charge-limited current (SCLC) mechanism and the Schottky emission. Therefore, this work indicates that the bilayer WO_x/BiFeO_y heterojunction as functional layer can effectively improve the performance of memristive devices, which will further expand the application of ferroelectric/metal oxide heterojunction in the field of memristors.