Negative capacitance induced by redistribution of oxygen vacancies in the fatigued BiFeO 3-based thin film

Qingqing Ke; Xiaojie Lou; Haibo Yang; Amit Kumar; Kaiyang Zeng; John Wang

doi:10.1063/1.4733982

Negative capacitance induced by redistribution of oxygen vacancies in the fatigued BiFeO ₃-based thin film

Qingqing Ke
, Xiaojie Lou
, Haibo Yang
, Amit Kumar
, Kaiyang Zeng
, John Wang

Frontier Institute of Science and Technology

National University of Singapore

Research output: Contribution to journal › Article › peer-review

13 Scopus citations

Abstract

The capacitance dispersion in La and Mg co-substituted BiFeO ₃ thin film has been studied at different stages of polarization switching. A negative capacitance (NC) behavior is observed in the sample that is fatigued above 10 ⁹ switching cycles. The origin of the NC is investigated through analyzing relaxation processes and charge transport kinetics by admittance spectroscopy. An activation energy of ∼0.6 eV and a zero field mobility μ 0 5.33 ± 0.02 × 10 - 13 m 2 / Vs are thus obtained. A physical mechanism is proposed to explain this behavior. It involves a redistribution of oxygen vacancies, which are trapped at the film/electrode interface during the fatigue process.

Original language	English
Article number	022904
Journal	Applied Physics Letters
Volume	101
Issue number	2
DOIs	https://doi.org/10.1063/1.4733982
State	Published - 9 Jul 2012

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title = "Negative capacitance induced by redistribution of oxygen vacancies in the fatigued BiFeO 3-based thin film",

abstract = "The capacitance dispersion in La and Mg co-substituted BiFeO 3 thin film has been studied at different stages of polarization switching. A negative capacitance (NC) behavior is observed in the sample that is fatigued above 10 9 switching cycles. The origin of the NC is investigated through analyzing relaxation processes and charge transport kinetics by admittance spectroscopy. An activation energy of ∼0.6 eV and a zero field mobility μ 0 5.33 ± 0.02 × 10 - 13 m 2 / Vs are thus obtained. A physical mechanism is proposed to explain this behavior. It involves a redistribution of oxygen vacancies, which are trapped at the film/electrode interface during the fatigue process.",

author = "Qingqing Ke and Xiaojie Lou and Haibo Yang and Amit Kumar and Kaiyang Zeng and John Wang",

year = "2012",

month = jul,

day = "9",

doi = "10.1063/1.4733982",

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T1 - Negative capacitance induced by redistribution of oxygen vacancies in the fatigued BiFeO 3-based thin film

AU - Ke, Qingqing

AU - Lou, Xiaojie

AU - Yang, Haibo

AU - Kumar, Amit

AU - Zeng, Kaiyang

AU - Wang, John

PY - 2012/7/9

Y1 - 2012/7/9

N2 - The capacitance dispersion in La and Mg co-substituted BiFeO 3 thin film has been studied at different stages of polarization switching. A negative capacitance (NC) behavior is observed in the sample that is fatigued above 10 9 switching cycles. The origin of the NC is investigated through analyzing relaxation processes and charge transport kinetics by admittance spectroscopy. An activation energy of ∼0.6 eV and a zero field mobility μ 0 5.33 ± 0.02 × 10 - 13 m 2 / Vs are thus obtained. A physical mechanism is proposed to explain this behavior. It involves a redistribution of oxygen vacancies, which are trapped at the film/electrode interface during the fatigue process.

AB - The capacitance dispersion in La and Mg co-substituted BiFeO 3 thin film has been studied at different stages of polarization switching. A negative capacitance (NC) behavior is observed in the sample that is fatigued above 10 9 switching cycles. The origin of the NC is investigated through analyzing relaxation processes and charge transport kinetics by admittance spectroscopy. An activation energy of ∼0.6 eV and a zero field mobility μ 0 5.33 ± 0.02 × 10 - 13 m 2 / Vs are thus obtained. A physical mechanism is proposed to explain this behavior. It involves a redistribution of oxygen vacancies, which are trapped at the film/electrode interface during the fatigue process.

UR - https://www.scopus.com/pages/publications/84863937228

U2 - 10.1063/1.4733982

DO - 10.1063/1.4733982

M3 - 文章

AN - SCOPUS:84863937228

SN - 0003-6951

VL - 101

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 2

M1 - 022904

ER -

Negative capacitance induced by redistribution of oxygen vacancies in the fatigued BiFeO ₃-based thin film

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