Abstract
Undoped and Nb doped PZT thick films according to the formula Pb1 - x/2[(Zr0.52Ti0.48)1 - xNbx]O3 (x = 0, 0.02, 0.04, 0.06) with thickness of 1-5 μ m have been prepared by polymer poly(vinyl acetate) (PVAc)-assisted metal-organic thermal decomposition (MOD) process. Nb is introduced in the PZT thick films as a donor dopant to improve the electrical properties of PZT thick films. The Nb-doping effects on structures and properties of PZT thick films have been investigated. Our results reveal that the dielectric constant increases with Nb doping and reaches to a maximum value of 1776 at 4 at.% of Nb doping. The remnant polarization of Nb doped PZT films decreases. Meanwhile, the dielectric loss and the coercive field decrease slightly with Nb doping content.
| Original language | English |
|---|---|
| Pages (from-to) | 151-158 |
| Number of pages | 8 |
| Journal | Ferroelectrics |
| Volume | 383 |
| Issue number | 1 PART 4 |
| DOIs | |
| State | Published - 2009 |
| Event | 6th Asian Meeting on Ferroelectrics, AMF-6 - Taipei, Taiwan, Province of China Duration: 2 Aug 2008 → 6 Aug 2008 |
Keywords
- Dielectric properties
- Ferroelectric properties
- MOD process
- Nb-doped PZT thick films
- PVAc