Nanosized graphene sheets enhanced photoelectric behavior of carbon film on p-silicon substrate

Lei Yang; Gaijuan Hu; Dongqing Zhang; Dongfeng Diao

doi:10.1063/1.4959563

Nanosized graphene sheets enhanced photoelectric behavior of carbon film on p-silicon substrate

Lei Yang
, Gaijuan Hu
, Dongqing Zhang
, Dongfeng Diao

School of Mechanical Engineering

Research output: Contribution to journal › Article › peer-review

16 Scopus citations

Abstract

We found that nanosized graphene sheets enhanced the photoelectric behavior of graphene sheets embedded carbon (GSEC) film on p-silicon substrate, which was deposited under low energy electron irradiation in electron cyclotron resonance plasma. The GSEC/p-Si photodiode exhibited good photoelectric performance with photoresponsivity of 206 mA/W, rise and fall time of 2.2, and 4.3 μs for near-infrared (850 nm) light. The origin of the strong photoelectric behavior of GSEC film was ascribed to the appearance of graphene nanosheets, which led to higher barrier height and photoexcited electron-collection efficiency. This finding indicates that GSEC film has the potential for photoelectric applications.

Original language	English
Article number	031910
Journal	Applied Physics Letters
Volume	109
Issue number	3
DOIs	https://doi.org/10.1063/1.4959563
State	Published - 18 Jul 2016

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title = "Nanosized graphene sheets enhanced photoelectric behavior of carbon film on p-silicon substrate",

abstract = "We found that nanosized graphene sheets enhanced the photoelectric behavior of graphene sheets embedded carbon (GSEC) film on p-silicon substrate, which was deposited under low energy electron irradiation in electron cyclotron resonance plasma. The GSEC/p-Si photodiode exhibited good photoelectric performance with photoresponsivity of 206 mA/W, rise and fall time of 2.2, and 4.3 μs for near-infrared (850 nm) light. The origin of the strong photoelectric behavior of GSEC film was ascribed to the appearance of graphene nanosheets, which led to higher barrier height and photoexcited electron-collection efficiency. This finding indicates that GSEC film has the potential for photoelectric applications.",

author = "Lei Yang and Gaijuan Hu and Dongqing Zhang and Dongfeng Diao",

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T1 - Nanosized graphene sheets enhanced photoelectric behavior of carbon film on p-silicon substrate

AU - Yang, Lei

AU - Hu, Gaijuan

AU - Zhang, Dongqing

AU - Diao, Dongfeng

PY - 2016/7/18

Y1 - 2016/7/18

N2 - We found that nanosized graphene sheets enhanced the photoelectric behavior of graphene sheets embedded carbon (GSEC) film on p-silicon substrate, which was deposited under low energy electron irradiation in electron cyclotron resonance plasma. The GSEC/p-Si photodiode exhibited good photoelectric performance with photoresponsivity of 206 mA/W, rise and fall time of 2.2, and 4.3 μs for near-infrared (850 nm) light. The origin of the strong photoelectric behavior of GSEC film was ascribed to the appearance of graphene nanosheets, which led to higher barrier height and photoexcited electron-collection efficiency. This finding indicates that GSEC film has the potential for photoelectric applications.

AB - We found that nanosized graphene sheets enhanced the photoelectric behavior of graphene sheets embedded carbon (GSEC) film on p-silicon substrate, which was deposited under low energy electron irradiation in electron cyclotron resonance plasma. The GSEC/p-Si photodiode exhibited good photoelectric performance with photoresponsivity of 206 mA/W, rise and fall time of 2.2, and 4.3 μs for near-infrared (850 nm) light. The origin of the strong photoelectric behavior of GSEC film was ascribed to the appearance of graphene nanosheets, which led to higher barrier height and photoexcited electron-collection efficiency. This finding indicates that GSEC film has the potential for photoelectric applications.

UR - https://www.scopus.com/pages/publications/84979655960

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DO - 10.1063/1.4959563

M3 - 文章

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SN - 0003-6951

VL - 109

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 3

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ER -

Nanosized graphene sheets enhanced photoelectric behavior of carbon film on p-silicon substrate

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