Multiphotoconductance Levels of the Organic Semiconductor of Polyimide-Based Memristor Induced by Interface Charges

Wenhua Wang; Guangdong Zhou; Yuchen Wang; Bingtao Yan; Bai Sun; Shukai Duan; Qunliang Song

doi:10.1021/acs.jpclett.2c02651

Multiphotoconductance Levels of the Organic Semiconductor of Polyimide-Based Memristor Induced by Interface Charges

Wenhua Wang
, Guangdong Zhou
, Yuchen Wang
, Bingtao Yan
, Bai Sun
, Shukai Duan
, Qunliang Song

Frontier Institute of Science and Technology

Southwest University

Research output: Contribution to journal › Article › peer-review

34 Scopus citations

Abstract

A memristor with Au/polyimide (PI)/Au structure is prepared by magnetron sputtering to investigate the multiphotoconductance resistive switching (RS) memory behavior. The PI-based memristor presents stable bipolar RS memory and is sensitive to visible light. Four discrete conductance states in both high-resistance state (HRS) and low-resistance state (LRS) are obtained when illuminating by 365, 550, 590, and 780 nm light. Electron trapping and detrapping from the defects distributed at interfaces and the PI switching layer are responsible for the observed RS memory behavior. The enhanced trapping and detrapping process by light illumination is responsible for the multiconductance states. This work provides the possibility for further development of neuromorphic vision sensors using an organic semiconductor-based memristor.

Original language	English
Pages (from-to)	9941-9949
Number of pages	9
Journal	Journal of Physical Chemistry Letters
Volume	13
Issue number	42
DOIs	https://doi.org/10.1021/acs.jpclett.2c02651
State	Published - 27 Oct 2022

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10.1021/acs.jpclett.2c02651

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title = "Multiphotoconductance Levels of the Organic Semiconductor of Polyimide-Based Memristor Induced by Interface Charges",

abstract = "A memristor with Au/polyimide (PI)/Au structure is prepared by magnetron sputtering to investigate the multiphotoconductance resistive switching (RS) memory behavior. The PI-based memristor presents stable bipolar RS memory and is sensitive to visible light. Four discrete conductance states in both high-resistance state (HRS) and low-resistance state (LRS) are obtained when illuminating by 365, 550, 590, and 780 nm light. Electron trapping and detrapping from the defects distributed at interfaces and the PI switching layer are responsible for the observed RS memory behavior. The enhanced trapping and detrapping process by light illumination is responsible for the multiconductance states. This work provides the possibility for further development of neuromorphic vision sensors using an organic semiconductor-based memristor.",

author = "Wenhua Wang and Guangdong Zhou and Yuchen Wang and Bingtao Yan and Bai Sun and Shukai Duan and Qunliang Song",

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T1 - Multiphotoconductance Levels of the Organic Semiconductor of Polyimide-Based Memristor Induced by Interface Charges

AU - Wang, Wenhua

AU - Zhou, Guangdong

AU - Wang, Yuchen

AU - Yan, Bingtao

AU - Sun, Bai

AU - Duan, Shukai

AU - Song, Qunliang

PY - 2022/10/27

Y1 - 2022/10/27

N2 - A memristor with Au/polyimide (PI)/Au structure is prepared by magnetron sputtering to investigate the multiphotoconductance resistive switching (RS) memory behavior. The PI-based memristor presents stable bipolar RS memory and is sensitive to visible light. Four discrete conductance states in both high-resistance state (HRS) and low-resistance state (LRS) are obtained when illuminating by 365, 550, 590, and 780 nm light. Electron trapping and detrapping from the defects distributed at interfaces and the PI switching layer are responsible for the observed RS memory behavior. The enhanced trapping and detrapping process by light illumination is responsible for the multiconductance states. This work provides the possibility for further development of neuromorphic vision sensors using an organic semiconductor-based memristor.

AB - A memristor with Au/polyimide (PI)/Au structure is prepared by magnetron sputtering to investigate the multiphotoconductance resistive switching (RS) memory behavior. The PI-based memristor presents stable bipolar RS memory and is sensitive to visible light. Four discrete conductance states in both high-resistance state (HRS) and low-resistance state (LRS) are obtained when illuminating by 365, 550, 590, and 780 nm light. Electron trapping and detrapping from the defects distributed at interfaces and the PI switching layer are responsible for the observed RS memory behavior. The enhanced trapping and detrapping process by light illumination is responsible for the multiconductance states. This work provides the possibility for further development of neuromorphic vision sensors using an organic semiconductor-based memristor.

UR - https://www.scopus.com/pages/publications/85140618302

U2 - 10.1021/acs.jpclett.2c02651

DO - 10.1021/acs.jpclett.2c02651

M3 - 文章

C2 - 36260056

AN - SCOPUS:85140618302

SN - 1948-7185

VL - 13

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EP - 9949

JO - Journal of Physical Chemistry Letters

JF - Journal of Physical Chemistry Letters

IS - 42

ER -

Multiphotoconductance Levels of the Organic Semiconductor of Polyimide-Based Memristor Induced by Interface Charges

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