Multi-stage switching phenomenon in ultra-thin Ag films embedded into SrCoO3 multilayer films constructed resistive switching memory devices

Shuangsuo Mao; Xuejiao Zhang; Bai Sun; Bing Li; Shouhui Zhu; Pingping Zheng; Liang Zheng; Yudong Xia

doi:10.1142/S1793604718500388

Multi-stage switching phenomenon in ultra-thin Ag films embedded into SrCoO₃ multilayer films constructed resistive switching memory devices

Shuangsuo Mao
, Xuejiao Zhang
, Bai Sun
, Bing Li
, Shouhui Zhu
, Pingping Zheng
, Liang Zheng
, Yudong Xia

Research output: Contribution to journal › Article › peer-review

8 Scopus citations

Abstract

In this work, Ti and SrCoO₃ (SCO) have been used for preparing the resistance random access memory (RRAM) with Ti/(SCO/Ag)n/SCO/Ti (n=0, 1, 2, 3) structures. It is found that the as-prepared device with Ti/SCO/Ti (n=0) structure represents the nonobvious resistive switching effect. However, it displays a more obvious resistive switching effect in the Ti/SCO/Ag/SCO/Ti (n=1) device. In particular, a multi-stage switching phenomenon is observed when ultra-thin Ag films was embedded into SrCoO₃ multilayer films. Finally, the multi-stage switching effect is explained by the model of conductive filaments formed step-by-step.

Original language	English
Article number	1850038
Journal	Functional Materials Letters
Volume	11
Issue number	2
DOIs	https://doi.org/10.1142/S1793604718500388
State	Published - 1 Apr 2018
Externally published	Yes

Keywords

SrCoO multilayer films
memory device
multi-stage switching
resistive switching
ultra-thin Ag films

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10.1142/S1793604718500388

Cite this

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title = "Multi-stage switching phenomenon in ultra-thin Ag films embedded into SrCoO3 multilayer films constructed resistive switching memory devices",

abstract = "In this work, Ti and SrCoO3 (SCO) have been used for preparing the resistance random access memory (RRAM) with Ti/(SCO/Ag)n/SCO/Ti (n=0, 1, 2, 3) structures. It is found that the as-prepared device with Ti/SCO/Ti (n=0) structure represents the nonobvious resistive switching effect. However, it displays a more obvious resistive switching effect in the Ti/SCO/Ag/SCO/Ti (n=1) device. In particular, a multi-stage switching phenomenon is observed when ultra-thin Ag films was embedded into SrCoO3 multilayer films. Finally, the multi-stage switching effect is explained by the model of conductive filaments formed step-by-step.",

keywords = "SrCoO multilayer films, memory device, multi-stage switching, resistive switching, ultra-thin Ag films",

author = "Shuangsuo Mao and Xuejiao Zhang and Bai Sun and Bing Li and Shouhui Zhu and Pingping Zheng and Liang Zheng and Yudong Xia",

note = "Publisher Copyright: {\textcopyright} 2018 World Scientific Publishing Company.",

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doi = "10.1142/S1793604718500388",

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T1 - Multi-stage switching phenomenon in ultra-thin Ag films embedded into SrCoO3 multilayer films constructed resistive switching memory devices

AU - Mao, Shuangsuo

AU - Zhang, Xuejiao

AU - Sun, Bai

AU - Li, Bing

AU - Zhu, Shouhui

AU - Zheng, Pingping

AU - Zheng, Liang

AU - Xia, Yudong

PY - 2018/4/1

Y1 - 2018/4/1

N2 - In this work, Ti and SrCoO3 (SCO) have been used for preparing the resistance random access memory (RRAM) with Ti/(SCO/Ag)n/SCO/Ti (n=0, 1, 2, 3) structures. It is found that the as-prepared device with Ti/SCO/Ti (n=0) structure represents the nonobvious resistive switching effect. However, it displays a more obvious resistive switching effect in the Ti/SCO/Ag/SCO/Ti (n=1) device. In particular, a multi-stage switching phenomenon is observed when ultra-thin Ag films was embedded into SrCoO3 multilayer films. Finally, the multi-stage switching effect is explained by the model of conductive filaments formed step-by-step.

AB - In this work, Ti and SrCoO3 (SCO) have been used for preparing the resistance random access memory (RRAM) with Ti/(SCO/Ag)n/SCO/Ti (n=0, 1, 2, 3) structures. It is found that the as-prepared device with Ti/SCO/Ti (n=0) structure represents the nonobvious resistive switching effect. However, it displays a more obvious resistive switching effect in the Ti/SCO/Ag/SCO/Ti (n=1) device. In particular, a multi-stage switching phenomenon is observed when ultra-thin Ag films was embedded into SrCoO3 multilayer films. Finally, the multi-stage switching effect is explained by the model of conductive filaments formed step-by-step.

KW - SrCoO multilayer films

KW - memory device

KW - multi-stage switching

KW - resistive switching

KW - ultra-thin Ag films

UR - https://www.scopus.com/pages/publications/85045477532

U2 - 10.1142/S1793604718500388

DO - 10.1142/S1793604718500388

M3 - 文章

AN - SCOPUS:85045477532

SN - 1793-6047

VL - 11

JO - Functional Materials Letters

JF - Functional Materials Letters

IS - 2

M1 - 1850038

ER -

Multi-stage switching phenomenon in ultra-thin Ag films embedded into SrCoO₃ multilayer films constructed resistive switching memory devices

Abstract

Keywords

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