TY - JOUR
T1 - Multi-factors-regulated memristor based on Sm-doped Pb(Mg1/3Nb2/3)O3–PbTiO3 for artificial neural network
AU - Lin, Fulai
AU - Li, Zhuoqun
AU - Sun, Bai
AU - Peng, Wei
AU - Cao, Zelin
AU - Gao, Kaikai
AU - Cui, Yu
AU - Zhu, Kun
AU - Lu, Qiang
AU - Li, Jinglei
AU - Lyu, Yi
AU - Ren, Fenggang
N1 - Publisher Copyright:
© 2024 The Authors
PY - 2024/6
Y1 - 2024/6
N2 - The memristor, characterized by its resistive switching (RS) behavior, has garnered significant interest within the scientific community, particularly because of its vast potential applications in the fields of artificial intelligence (AI) and information storage. This is attributed to its unique properties, which align well with the requirements of advanced computational and memory systems. Ferroelectric memristors are currently a thriving area of research, and this study uses Sm-doped Pb(Mg1/3Nb2/3)O3–PbTiO3 (Sm-PMN-PT) and polyvinylidene difluoride (PVDF) as the functional layer. A multi-factor responsive memristor based on a Ag/Sm-PMN-PT:PVDF/ITO sandwich structure is fabricated, for which the RS behavior of the memristor can be adjusted by multi-factors such as voltage scanning rate, bias voltage amplitude, temperature and environmental humidity. Specifically, this device is sensitive to changes in environmental humidity and exhibits the properties of an artificial neural synapse. These advantageous characteristics endow this device with great potential for use in environmental sensors and artificial neural network (ANN) systems.
AB - The memristor, characterized by its resistive switching (RS) behavior, has garnered significant interest within the scientific community, particularly because of its vast potential applications in the fields of artificial intelligence (AI) and information storage. This is attributed to its unique properties, which align well with the requirements of advanced computational and memory systems. Ferroelectric memristors are currently a thriving area of research, and this study uses Sm-doped Pb(Mg1/3Nb2/3)O3–PbTiO3 (Sm-PMN-PT) and polyvinylidene difluoride (PVDF) as the functional layer. A multi-factor responsive memristor based on a Ag/Sm-PMN-PT:PVDF/ITO sandwich structure is fabricated, for which the RS behavior of the memristor can be adjusted by multi-factors such as voltage scanning rate, bias voltage amplitude, temperature and environmental humidity. Specifically, this device is sensitive to changes in environmental humidity and exhibits the properties of an artificial neural synapse. These advantageous characteristics endow this device with great potential for use in environmental sensors and artificial neural network (ANN) systems.
KW - Artificial neural network
KW - Ferroelectric material
KW - Memristor
KW - Multi-factors regulated
KW - Multifunctional device
UR - https://www.scopus.com/pages/publications/85195268843
U2 - 10.1016/j.mtadv.2024.100506
DO - 10.1016/j.mtadv.2024.100506
M3 - 文章
AN - SCOPUS:85195268843
SN - 2590-0498
VL - 22
JO - Materials Today Advances
JF - Materials Today Advances
M1 - 100506
ER -