MSM ultraviolet photodetector of Mg0.2Zn0.8O by LMBE

Zhen Bi; Jingwen Zhang; Xuming Bian; Dong Wang; Xin'an Zhang; Xun Hou

MSM ultraviolet photodetector of Mg_0.2Zn_0.8O by LMBE

Zhen Bi
, Jingwen Zhang
, Xuming Bian
, Dong Wang
, Xin'an Zhang
, Xun Hou

Faculty of Electronic and Information Engineering

Research output: Contribution to journal › Article › peer-review

Abstract

Mg_0.2Zn_0.8O films were deposited on the c-plane of sapphire by LMBE with two different structures. The films were all annealed in air at 900°C for 1h. Then interdigital Al electrodes were evaporated on the films using the standard liftoff technique. A Mg_0.2Zn_0.8O ultraviolet photodetector was obtained, with a fast rise time of 14.3ns and fall time of 6.5μs.

Original language	English
Pages (from-to)	1242-1247
Number of pages	6
Journal	Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors
Volume	28
Issue number	8
State	Published - Aug 2007

Keywords

MgZnO film
Response time
Ultraviolet photodetector

Cite this

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title = "MSM ultraviolet photodetector of Mg0.2Zn0.8O by LMBE",

abstract = "Mg0.2Zn0.8O films were deposited on the c-plane of sapphire by LMBE with two different structures. The films were all annealed in air at 900°C for 1h. Then interdigital Al electrodes were evaporated on the films using the standard liftoff technique. A Mg0.2Zn0.8O ultraviolet photodetector was obtained, with a fast rise time of 14.3ns and fall time of 6.5μs.",

keywords = "MgZnO film, Response time, Ultraviolet photodetector",

author = "Zhen Bi and Jingwen Zhang and Xuming Bian and Dong Wang and Xin'an Zhang and Xun Hou",

year = "2007",

month = aug,

language = "英语",

volume = "28",

pages = "1242--1247",

journal = "Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors",

issn = "0253-4177",

publisher = "Kexue Chubaneshe/Science Press",

number = "8",

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TY - JOUR

T1 - MSM ultraviolet photodetector of Mg0.2Zn0.8O by LMBE

AU - Bi, Zhen

AU - Zhang, Jingwen

AU - Bian, Xuming

AU - Wang, Dong

AU - Zhang, Xin'an

AU - Hou, Xun

PY - 2007/8

Y1 - 2007/8

N2 - Mg0.2Zn0.8O films were deposited on the c-plane of sapphire by LMBE with two different structures. The films were all annealed in air at 900°C for 1h. Then interdigital Al electrodes were evaporated on the films using the standard liftoff technique. A Mg0.2Zn0.8O ultraviolet photodetector was obtained, with a fast rise time of 14.3ns and fall time of 6.5μs.

AB - Mg0.2Zn0.8O films were deposited on the c-plane of sapphire by LMBE with two different structures. The films were all annealed in air at 900°C for 1h. Then interdigital Al electrodes were evaporated on the films using the standard liftoff technique. A Mg0.2Zn0.8O ultraviolet photodetector was obtained, with a fast rise time of 14.3ns and fall time of 6.5μs.

KW - MgZnO film

KW - Response time

KW - Ultraviolet photodetector

UR - https://www.scopus.com/pages/publications/34548495344

M3 - 文章

AN - SCOPUS:34548495344

SN - 0253-4177

VL - 28

SP - 1242

EP - 1247

JO - Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors

JF - Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors

IS - 8

ER -

MSM ultraviolet photodetector of Mg_0.2Zn_0.8O by LMBE

Abstract

Keywords

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