MPCVD单晶金刚石生长及其电子器件研究进展

In this review, the microwave plasma chemical vapor deposition (MPCVD) single crystal diamond growth and diamond electronic devices in recent years are reviewed, and diamond prospects are also discussed. The characteristics, principle, equipment and substrate treatment during diamond growth are introduced in detail. In order to obtain the optimal growth conditions, the key factors affecting the MPCVD diamond growth are discussed. Key growth technologies such as lateral overgrowth, mosaic growth and three-dimensional growth techniques are analyzed to gradually improve the quality and size. In the research progress of diamond doping, the research progress of n-type and p-type doping is introduced detailly. Through the research on diamond Schottky diodes, hydrogen terminated diamond field effect transistors and diamond ultraviolet detectors, the achievements and progress of diamond in the field of electronic devices have been demonstrated. Finally, the challenges of diamond growth and application in electronic devices are summarized. We believe that diamond has great potentials in application of electronic field in the future.