Morphology, defects and electrical properties of boron-doped single crystal diamond under various oxygen concentration

Ruozheng Wang; Bo Peng; Hao Bai; Zhijian Guo; Qiang Wei; Kaiyue Wang; Cui Yu; Gang Niu; Hong Xing Wang

doi:10.1016/j.matlet.2022.132345

Morphology, defects and electrical properties of boron-doped single crystal diamond under various oxygen concentration

Ruozheng Wang
, Bo Peng
, Hao Bai
, Zhijian Guo
, Qiang Wei
, Kaiyue Wang
, Cui Yu
, Gang Niu
, Hong Xing Wang

Faculty of Electronic and Information Engineering

Research output: Contribution to journal › Article › peer-review

15 Scopus citations

Abstract

In this work, high quality boron-oxygen co-doped homoepitaxial diamond has been proposed. The morphology of diamond was smooth and flat with the O₂/H₂ ratios less than 1%. The X-ray diffraction, Photoluminescence and Raman spectroscopy illustrated that the substitution of oxygen into diamond lattice could inhibit nitrogen related defects and improve the crystallinity. The Raman mapping showed that tensile stress were formed from film surface to substrate. Under the O₂/H₂ ratio of 1%, the mobility of 892 cm²/V·s at boron concentration of 4.7 × 10¹⁷ cm⁻³ were obtained, which showed decent electrical properties.

Original language	English
Article number	132345
Journal	Materials Letters
Volume	322
DOIs	https://doi.org/10.1016/j.matlet.2022.132345
State	Published - 1 Sep 2022

Keywords

B-O co-doping
Diamond
Electrical properties
Epitaxial growth
Raman

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10.1016/j.matlet.2022.132345

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@article{fe2b71c0318e431ca3539f44e3861f9b,

title = "Morphology, defects and electrical properties of boron-doped single crystal diamond under various oxygen concentration",

abstract = "In this work, high quality boron-oxygen co-doped homoepitaxial diamond has been proposed. The morphology of diamond was smooth and flat with the O2/H2 ratios less than 1\%. The X-ray diffraction, Photoluminescence and Raman spectroscopy illustrated that the substitution of oxygen into diamond lattice could inhibit nitrogen related defects and improve the crystallinity. The Raman mapping showed that tensile stress were formed from film surface to substrate. Under the O2/H2 ratio of 1\%, the mobility of 892 cm2/V·s at boron concentration of 4.7 × 1017 cm−3 were obtained, which showed decent electrical properties.",

keywords = "B-O co-doping, Diamond, Electrical properties, Epitaxial growth, Raman",

author = "Ruozheng Wang and Bo Peng and Hao Bai and Zhijian Guo and Qiang Wei and Kaiyue Wang and Cui Yu and Gang Niu and Wang, \{Hong Xing\}",

note = "Publisher Copyright: {\textcopyright} 2022 Elsevier B.V.",

year = "2022",

month = sep,

day = "1",

doi = "10.1016/j.matlet.2022.132345",

language = "英语",

volume = "322",

journal = "Materials Letters",

issn = "0167-577X",

publisher = "Elsevier B.V.",

}

TY - JOUR

T1 - Morphology, defects and electrical properties of boron-doped single crystal diamond under various oxygen concentration

AU - Wang, Ruozheng

AU - Peng, Bo

AU - Bai, Hao

AU - Guo, Zhijian

AU - Wei, Qiang

AU - Wang, Kaiyue

AU - Yu, Cui

AU - Niu, Gang

AU - Wang, Hong Xing

PY - 2022/9/1

Y1 - 2022/9/1

N2 - In this work, high quality boron-oxygen co-doped homoepitaxial diamond has been proposed. The morphology of diamond was smooth and flat with the O2/H2 ratios less than 1%. The X-ray diffraction, Photoluminescence and Raman spectroscopy illustrated that the substitution of oxygen into diamond lattice could inhibit nitrogen related defects and improve the crystallinity. The Raman mapping showed that tensile stress were formed from film surface to substrate. Under the O2/H2 ratio of 1%, the mobility of 892 cm2/V·s at boron concentration of 4.7 × 1017 cm−3 were obtained, which showed decent electrical properties.

AB - In this work, high quality boron-oxygen co-doped homoepitaxial diamond has been proposed. The morphology of diamond was smooth and flat with the O2/H2 ratios less than 1%. The X-ray diffraction, Photoluminescence and Raman spectroscopy illustrated that the substitution of oxygen into diamond lattice could inhibit nitrogen related defects and improve the crystallinity. The Raman mapping showed that tensile stress were formed from film surface to substrate. Under the O2/H2 ratio of 1%, the mobility of 892 cm2/V·s at boron concentration of 4.7 × 1017 cm−3 were obtained, which showed decent electrical properties.

KW - B-O co-doping

KW - Diamond

KW - Electrical properties

KW - Epitaxial growth

KW - Raman

UR - https://www.scopus.com/pages/publications/85130722908

U2 - 10.1016/j.matlet.2022.132345

DO - 10.1016/j.matlet.2022.132345

M3 - 文章

AN - SCOPUS:85130722908

SN - 0167-577X

VL - 322

JO - Materials Letters

JF - Materials Letters

M1 - 132345

ER -

Morphology, defects and electrical properties of boron-doped single crystal diamond under various oxygen concentration

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Keywords

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