Abstract
A monolithic silicon multi-sensor for use in harsh environment is presented in this paper. This monolithic multi-sensor is fabricated with SOI wafer, which consists of a three-axis piezoresistive accelerometer, a piezoresistive absolute pressure sensor and a silicon thermistor temperature sensor. The designed structures of the multi-sensor are simulated by FEM (finite-element method). The simulation results for the multi-sensor are utilized to determine the position of piezoresistor and the size of the structures. The fabricating process of the monolithic multi-sensor is described, which uses bulk-micromachining technology and silicon-on-glass anodic bonding technology. At last the measurement results of the multi-sensor are shown.
| Original language | English |
|---|---|
| Pages (from-to) | 1393-1398 |
| Number of pages | 6 |
| Journal | Yi Qi Yi Biao Xue Bao/Chinese Journal of Scientific Instrument |
| Volume | 28 |
| Issue number | 8 |
| State | Published - Aug 2007 |
Keywords
- MEMS
- Monolithic multi-sensor
- SOI