Minimum excited threshold in electron trapping materials

Wenhui Fan; Yongchang Wang; Xun Hou; Li Du; Binzhou Yang; Wei Zhao; Lihong Niu

Minimum excited threshold in electron trapping materials

Wenhui Fan
, Yongchang Wang
, Xun Hou
, Li Du
, Binzhou Yang
, Wei Zhao
, Lihong Niu

Faculty of Electronic and Information Engineering

Xi'an Jiaotong University

Research output: Contribution to journal › Article › peer-review

1 Scopus citations

Abstract

Under the stimulation of the 1.064 μm ultra-short infrared pulse laser produced by a pulsed CPM Nd:YAG laser, projecting a reference light and measuring light simultaneously, and using a visible streak camera, the infrared minimum excited threshold of the electron trapping materials CaS:Eu, Sm was studied. The results show that the infrared minimum excited threshold of CaS:Eu, Sm measured by a visible streak camera with minimum detectable energy density less than 8.3×10^-10 J/mm² (532 nm), is less than 4.8×10^-9 J/mm².

Original language	English
Pages (from-to)	257-262
Number of pages	6
Journal	Zhongguo Jiguang/Chinese Journal of Lasers
Volume	26
Issue number	3
State	Published - Mar 1999

Cite this

@article{8e79e709e6c244a2877ade4e253853ef,

title = "Minimum excited threshold in electron trapping materials",

abstract = "Under the stimulation of the 1.064 μm ultra-short infrared pulse laser produced by a pulsed CPM Nd:YAG laser, projecting a reference light and measuring light simultaneously, and using a visible streak camera, the infrared minimum excited threshold of the electron trapping materials CaS:Eu, Sm was studied. The results show that the infrared minimum excited threshold of CaS:Eu, Sm measured by a visible streak camera with minimum detectable energy density less than 8.3×10-10 J/mm2 (532 nm), is less than 4.8×10-9 J/mm2.",

author = "Wenhui Fan and Yongchang Wang and Xun Hou and Li Du and Binzhou Yang and Wei Zhao and Lihong Niu",

year = "1999",

month = mar,

language = "英语",

volume = "26",

pages = "257--262",

journal = "Zhongguo Jiguang/Chinese Journal of Lasers",

issn = "0258-7025",

publisher = "Science Press ",

number = "3",

}

TY - JOUR

T1 - Minimum excited threshold in electron trapping materials

AU - Fan, Wenhui

AU - Wang, Yongchang

AU - Hou, Xun

AU - Du, Li

AU - Yang, Binzhou

AU - Zhao, Wei

AU - Niu, Lihong

PY - 1999/3

Y1 - 1999/3

N2 - Under the stimulation of the 1.064 μm ultra-short infrared pulse laser produced by a pulsed CPM Nd:YAG laser, projecting a reference light and measuring light simultaneously, and using a visible streak camera, the infrared minimum excited threshold of the electron trapping materials CaS:Eu, Sm was studied. The results show that the infrared minimum excited threshold of CaS:Eu, Sm measured by a visible streak camera with minimum detectable energy density less than 8.3×10-10 J/mm2 (532 nm), is less than 4.8×10-9 J/mm2.

AB - Under the stimulation of the 1.064 μm ultra-short infrared pulse laser produced by a pulsed CPM Nd:YAG laser, projecting a reference light and measuring light simultaneously, and using a visible streak camera, the infrared minimum excited threshold of the electron trapping materials CaS:Eu, Sm was studied. The results show that the infrared minimum excited threshold of CaS:Eu, Sm measured by a visible streak camera with minimum detectable energy density less than 8.3×10-10 J/mm2 (532 nm), is less than 4.8×10-9 J/mm2.

UR - https://www.scopus.com/pages/publications/0033086665

M3 - 文章

AN - SCOPUS:0033086665

SN - 0258-7025

VL - 26

SP - 257

EP - 262

JO - Zhongguo Jiguang/Chinese Journal of Lasers

JF - Zhongguo Jiguang/Chinese Journal of Lasers

IS - 3

ER -

Minimum excited threshold in electron trapping materials

Abstract

Other files and links

Fingerprint

Cite this