Microwave tunability in a GaAs-based multiferroic heterostructure: Co2 MnAl/GaAs/PMN-PT

Y. Chen; J. Gao; J. Lou; M. Liu; S. D. Yoon; A. L. Geiler; M. Nedoroscik; D. Heiman; N. X. Sun; C. Vittoria; V. G. Harris

doi:10.1063/1.3068543

Microwave tunability in a GaAs-based multiferroic heterostructure: Co2 MnAl/GaAs/PMN-PT

Y. Chen
, J. Gao
, J. Lou
, M. Liu
, S. D. Yoon
, A. L. Geiler
, M. Nedoroscik
, D. Heiman
, N. X. Sun
, C. Vittoria
, V. G. Harris

Northeastern University

Research output: Contribution to journal › Article › peer-review

46 Scopus citations

Abstract

A strong magnetoelectric (ME) interaction is presented in a magnetostrictive-semiconductor-piezoelectric heterostructure that consists of the Huesler alloy, Co2 MnAl, GaAs, and lead magnesium niobate-lead titanate (PMN-PT). The laminated Co2 MnAl/GaAs/PMN-PT structure, having a thickness of 19 nm/180 μm/500 μm, demonstrates a ferromagnetic resonance (FMR) field shift of 28 Oe with an external electric field of 200 V across the PMN-PT substrate. This corresponds to a resonance frequency shift of ∼125 MHz at X -band. It yields a large ME coupling (7 Oe cm/kV) and microwave tunability (∼32 MHz/kV cm-1), compared to other trilayer multiferroic composite structures. In addition, static magnetization measurement indicates a reduction in the remanence magnetization while applying the electric field, which corroborates the ME interactions mediated by the translation of magnetoelastic forces in this structure. This work explores the potential of multiferroic heterostrucuture transducers for use in FMR microwave devices tuned by electric fields.

Original language	English
Article number	07A510
Journal	Journal of Applied Physics
Volume	105
Issue number	7
DOIs	https://doi.org/10.1063/1.3068543
State	Published - 2009
Externally published	Yes

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@article{161bf0829a9440b39aba5665f1a38cfb,

title = "Microwave tunability in a GaAs-based multiferroic heterostructure: Co2 MnAl/GaAs/PMN-PT",

abstract = "A strong magnetoelectric (ME) interaction is presented in a magnetostrictive-semiconductor-piezoelectric heterostructure that consists of the Huesler alloy, Co2 MnAl, GaAs, and lead magnesium niobate-lead titanate (PMN-PT). The laminated Co2 MnAl/GaAs/PMN-PT structure, having a thickness of 19 nm/180 μm/500 μm, demonstrates a ferromagnetic resonance (FMR) field shift of 28 Oe with an external electric field of 200 V across the PMN-PT substrate. This corresponds to a resonance frequency shift of ∼125 MHz at X -band. It yields a large ME coupling (7 Oe cm/kV) and microwave tunability (∼32 MHz/kV cm-1), compared to other trilayer multiferroic composite structures. In addition, static magnetization measurement indicates a reduction in the remanence magnetization while applying the electric field, which corroborates the ME interactions mediated by the translation of magnetoelastic forces in this structure. This work explores the potential of multiferroic heterostrucuture transducers for use in FMR microwave devices tuned by electric fields.",

author = "Y. Chen and J. Gao and J. Lou and M. Liu and Yoon, \{S. D.\} and Geiler, \{A. L.\} and M. Nedoroscik and D. Heiman and Sun, \{N. X.\} and C. Vittoria and Harris, \{V. G.\}",

year = "2009",

doi = "10.1063/1.3068543",

language = "英语",

volume = "105",

journal = "Journal of Applied Physics",

issn = "0021-8979",

publisher = "American Institute of Physics",

number = "7",

}

TY - JOUR

T1 - Microwave tunability in a GaAs-based multiferroic heterostructure

T2 - Co2 MnAl/GaAs/PMN-PT

AU - Chen, Y.

AU - Gao, J.

AU - Lou, J.

AU - Liu, M.

AU - Yoon, S. D.

AU - Geiler, A. L.

AU - Nedoroscik, M.

AU - Heiman, D.

AU - Sun, N. X.

AU - Vittoria, C.

AU - Harris, V. G.

PY - 2009

Y1 - 2009

N2 - A strong magnetoelectric (ME) interaction is presented in a magnetostrictive-semiconductor-piezoelectric heterostructure that consists of the Huesler alloy, Co2 MnAl, GaAs, and lead magnesium niobate-lead titanate (PMN-PT). The laminated Co2 MnAl/GaAs/PMN-PT structure, having a thickness of 19 nm/180 μm/500 μm, demonstrates a ferromagnetic resonance (FMR) field shift of 28 Oe with an external electric field of 200 V across the PMN-PT substrate. This corresponds to a resonance frequency shift of ∼125 MHz at X -band. It yields a large ME coupling (7 Oe cm/kV) and microwave tunability (∼32 MHz/kV cm-1), compared to other trilayer multiferroic composite structures. In addition, static magnetization measurement indicates a reduction in the remanence magnetization while applying the electric field, which corroborates the ME interactions mediated by the translation of magnetoelastic forces in this structure. This work explores the potential of multiferroic heterostrucuture transducers for use in FMR microwave devices tuned by electric fields.

AB - A strong magnetoelectric (ME) interaction is presented in a magnetostrictive-semiconductor-piezoelectric heterostructure that consists of the Huesler alloy, Co2 MnAl, GaAs, and lead magnesium niobate-lead titanate (PMN-PT). The laminated Co2 MnAl/GaAs/PMN-PT structure, having a thickness of 19 nm/180 μm/500 μm, demonstrates a ferromagnetic resonance (FMR) field shift of 28 Oe with an external electric field of 200 V across the PMN-PT substrate. This corresponds to a resonance frequency shift of ∼125 MHz at X -band. It yields a large ME coupling (7 Oe cm/kV) and microwave tunability (∼32 MHz/kV cm-1), compared to other trilayer multiferroic composite structures. In addition, static magnetization measurement indicates a reduction in the remanence magnetization while applying the electric field, which corroborates the ME interactions mediated by the translation of magnetoelastic forces in this structure. This work explores the potential of multiferroic heterostrucuture transducers for use in FMR microwave devices tuned by electric fields.

UR - https://www.scopus.com/pages/publications/65249145134

U2 - 10.1063/1.3068543

DO - 10.1063/1.3068543

M3 - 文章

AN - SCOPUS:65249145134

SN - 0021-8979

VL - 105

JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 7

M1 - 07A510

ER -

Microwave tunability in a GaAs-based multiferroic heterostructure: Co2 MnAl/GaAs/PMN-PT

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