Microwave dielectric properties with optimized Mn-doped Ba 0.6Sr0.4TiO3 highly epitaxial thin films

Ming Liu; Chunrui Ma; Greg Collins; Jian Liu; Chonglin Chen; Li Shui; Hong Wang; Chao Dai; Yuan Lin; Jie He; Jiechao Jiang; Efstathios I. Meletis; Qingyu Zhang

doi:10.1021/cg1006132

Microwave dielectric properties with optimized Mn-doped Ba _0.6Sr_0.4TiO₃ highly epitaxial thin films

Ming Liu
, Chunrui Ma
, Greg Collins
, Jian Liu
, Chonglin Chen
, Li Shui
, Hong Wang
, Chao Dai
, Yuan Lin
, Jie He
, Jiechao Jiang
, Efstathios I. Meletis
, Qingyu Zhang

University of Texas at San Antonio
Dalian University of Technology
Xi'an Jiaotong University
University of Electronic Science and Technology of China
University of Texas at Arlington

Research output: Contribution to journal › Article › peer-review

29 Scopus citations

Abstract

Pure and Mn doped Ba_0.6Sr_0.4TiO₃ (0.5%, 2%) (BST) thin films were epitaxially grown on the (001) LaAlO₃ using pulsed laser deposition. Microstructural characterizations indicate that the as-grown thin films have excellent single crystalline quality and epitaxial nature with an atomically sharp interface and an interface relationship of [100]_film//[100]_LAO and (001)_film//(001) _LAO. Microwave dielectric property measurements indicate that the additional Mn doping can significantly enhance the microwave dielectric properties of the BST films.

Original language	English
Pages (from-to)	4221-4223
Number of pages	3
Journal	Crystal Growth and Design
Volume	10
Issue number	10
DOIs	https://doi.org/10.1021/cg1006132
State	Published - 6 Oct 2010
Externally published	Yes

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10.1021/cg1006132

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title = "Microwave dielectric properties with optimized Mn-doped Ba 0.6Sr0.4TiO3 highly epitaxial thin films",

abstract = "Pure and Mn doped Ba0.6Sr0.4TiO3 (0.5\%, 2\%) (BST) thin films were epitaxially grown on the (001) LaAlO3 using pulsed laser deposition. Microstructural characterizations indicate that the as-grown thin films have excellent single crystalline quality and epitaxial nature with an atomically sharp interface and an interface relationship of [100]film//[100]LAO and (001)film//(001) LAO. Microwave dielectric property measurements indicate that the additional Mn doping can significantly enhance the microwave dielectric properties of the BST films.",

author = "Ming Liu and Chunrui Ma and Greg Collins and Jian Liu and Chonglin Chen and Li Shui and Hong Wang and Chao Dai and Yuan Lin and Jie He and Jiechao Jiang and Meletis, \{Efstathios I.\} and Qingyu Zhang",

year = "2010",

month = oct,

day = "6",

doi = "10.1021/cg1006132",

language = "英语",

volume = "10",

pages = "4221--4223",

journal = "Crystal Growth and Design",

issn = "1528-7483",

publisher = "American Chemical Society",

number = "10",

}

TY - JOUR

T1 - Microwave dielectric properties with optimized Mn-doped Ba 0.6Sr0.4TiO3 highly epitaxial thin films

AU - Liu, Ming

AU - Ma, Chunrui

AU - Collins, Greg

AU - Liu, Jian

AU - Chen, Chonglin

AU - Shui, Li

AU - Wang, Hong

AU - Dai, Chao

AU - Lin, Yuan

AU - He, Jie

AU - Jiang, Jiechao

AU - Meletis, Efstathios I.

AU - Zhang, Qingyu

PY - 2010/10/6

Y1 - 2010/10/6

N2 - Pure and Mn doped Ba0.6Sr0.4TiO3 (0.5%, 2%) (BST) thin films were epitaxially grown on the (001) LaAlO3 using pulsed laser deposition. Microstructural characterizations indicate that the as-grown thin films have excellent single crystalline quality and epitaxial nature with an atomically sharp interface and an interface relationship of [100]film//[100]LAO and (001)film//(001) LAO. Microwave dielectric property measurements indicate that the additional Mn doping can significantly enhance the microwave dielectric properties of the BST films.

AB - Pure and Mn doped Ba0.6Sr0.4TiO3 (0.5%, 2%) (BST) thin films were epitaxially grown on the (001) LaAlO3 using pulsed laser deposition. Microstructural characterizations indicate that the as-grown thin films have excellent single crystalline quality and epitaxial nature with an atomically sharp interface and an interface relationship of [100]film//[100]LAO and (001)film//(001) LAO. Microwave dielectric property measurements indicate that the additional Mn doping can significantly enhance the microwave dielectric properties of the BST films.

UR - https://www.scopus.com/pages/publications/77957705862

U2 - 10.1021/cg1006132

DO - 10.1021/cg1006132

M3 - 文章

AN - SCOPUS:77957705862

SN - 1528-7483

VL - 10

SP - 4221

EP - 4223

JO - Crystal Growth and Design

JF - Crystal Growth and Design

IS - 10

ER -

Microwave dielectric properties with optimized Mn-doped Ba _0.6Sr_0.4TiO₃ highly epitaxial thin films

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