Microwave dielectric properties of scheelite structured low temperature fired Bi(In1/3Mo2/3)O4 ceramic

Li Xia Pang; Di Zhou; Jing Guo; Ze Ming Qi; Tao Shao

doi:10.1016/j.ceramint.2012.11.021

Microwave dielectric properties of scheelite structured low temperature fired Bi(In_1/3Mo_2/3)O₄ ceramic

Li Xia Pang
, Di Zhou
, Jing Guo
, Ze Ming Qi
, Tao Shao

Research output: Contribution to journal › Article › peer-review

14 Scopus citations

Abstract

A Bi(In_1/3Mo_2/3)O₄ ceramic was prepared via the solid state reaction method. The pure monoclinic phase was formed at around 650 °C. Ceramic samples with relative densities above 97% were obtained when sintering temperature was around 840 °C. The best microwave dielectric properties were achieved in the Bi(In_1/3Mo _2/3)O₄ ceramic sintered at 840 °C for 2 h with permittivity ∼25.2, Qf of 40,000 GHz and temperature coefficient of resonance frequency ∼-65 ppm/°C at 8.2 GHz. The temperature dependence of microwave dielectric properties was also studied in a wide temperature range from -250 °C to +120 °C. The Qf value increased with the decrease of temperature and reached a maximum of 150,000 GHz at -250 °C.

Original language	English
Pages (from-to)	4719-4722
Number of pages	4
Journal	Ceramics International
Volume	39
Issue number	4
DOIs	https://doi.org/10.1016/j.ceramint.2012.11.021
State	Published - May 2013

Keywords

Electronic materials
Low temperature co-fired ceramic
Microwave dielectric property

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10.1016/j.ceramint.2012.11.021

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title = "Microwave dielectric properties of scheelite structured low temperature fired Bi(In1/3Mo2/3)O4 ceramic",

abstract = "A Bi(In1/3Mo2/3)O4 ceramic was prepared via the solid state reaction method. The pure monoclinic phase was formed at around 650 °C. Ceramic samples with relative densities above 97\% were obtained when sintering temperature was around 840 °C. The best microwave dielectric properties were achieved in the Bi(In1/3Mo 2/3)O4 ceramic sintered at 840 °C for 2 h with permittivity ∼25.2, Qf of 40,000 GHz and temperature coefficient of resonance frequency ∼-65 ppm/°C at 8.2 GHz. The temperature dependence of microwave dielectric properties was also studied in a wide temperature range from -250 °C to +120 °C. The Qf value increased with the decrease of temperature and reached a maximum of 150,000 GHz at -250 °C.",

keywords = "Electronic materials, Low temperature co-fired ceramic, Microwave dielectric property",

author = "Pang, \{Li Xia\} and Di Zhou and Jing Guo and Qi, \{Ze Ming\} and Tao Shao",

year = "2013",

month = may,

doi = "10.1016/j.ceramint.2012.11.021",

language = "英语",

volume = "39",

pages = "4719--4722",

journal = "Ceramics International",

issn = "0272-8842",

publisher = "Elsevier Ltd",

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TY - JOUR

T1 - Microwave dielectric properties of scheelite structured low temperature fired Bi(In1/3Mo2/3)O4 ceramic

AU - Pang, Li Xia

AU - Zhou, Di

AU - Guo, Jing

AU - Qi, Ze Ming

AU - Shao, Tao

PY - 2013/5

Y1 - 2013/5

N2 - A Bi(In1/3Mo2/3)O4 ceramic was prepared via the solid state reaction method. The pure monoclinic phase was formed at around 650 °C. Ceramic samples with relative densities above 97% were obtained when sintering temperature was around 840 °C. The best microwave dielectric properties were achieved in the Bi(In1/3Mo 2/3)O4 ceramic sintered at 840 °C for 2 h with permittivity ∼25.2, Qf of 40,000 GHz and temperature coefficient of resonance frequency ∼-65 ppm/°C at 8.2 GHz. The temperature dependence of microwave dielectric properties was also studied in a wide temperature range from -250 °C to +120 °C. The Qf value increased with the decrease of temperature and reached a maximum of 150,000 GHz at -250 °C.

AB - A Bi(In1/3Mo2/3)O4 ceramic was prepared via the solid state reaction method. The pure monoclinic phase was formed at around 650 °C. Ceramic samples with relative densities above 97% were obtained when sintering temperature was around 840 °C. The best microwave dielectric properties were achieved in the Bi(In1/3Mo 2/3)O4 ceramic sintered at 840 °C for 2 h with permittivity ∼25.2, Qf of 40,000 GHz and temperature coefficient of resonance frequency ∼-65 ppm/°C at 8.2 GHz. The temperature dependence of microwave dielectric properties was also studied in a wide temperature range from -250 °C to +120 °C. The Qf value increased with the decrease of temperature and reached a maximum of 150,000 GHz at -250 °C.

KW - Electronic materials

KW - Low temperature co-fired ceramic

KW - Microwave dielectric property

UR - https://www.scopus.com/pages/publications/84874667945

U2 - 10.1016/j.ceramint.2012.11.021

DO - 10.1016/j.ceramint.2012.11.021

M3 - 文章

AN - SCOPUS:84874667945

SN - 0272-8842

VL - 39

SP - 4719

EP - 4722

JO - Ceramics International

JF - Ceramics International

IS - 4

ER -

Microwave dielectric properties of scheelite structured low temperature fired Bi(In_1/3Mo_2/3)O₄ ceramic

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