Microwave dielectric properties of epitaxial mn-doped Ba(Zr,Ti)O 3 thin films on LaAlO 3 substrates

Ming Liu; Chunrui Ma; Jian Liu; Gregory Collins; Chonglin Chen; Andy D. Alemayehu; Guru Subramanyam; Chao Dai; Yuan Lin; Amar Bhalla

doi:10.1080/07315171.2013.814487

Microwave dielectric properties of epitaxial mn-doped Ba(Zr,Ti)O ₃ thin films on LaAlO ₃ substrates

Ming Liu
, Chunrui Ma
, Jian Liu
, Gregory Collins
, Chonglin Chen
, Andy D. Alemayehu
, Guru Subramanyam
, Chao Dai
, Yuan Lin
, Amar Bhalla

Faculty of Electronic and Information Engineering

University of Texas at San Antonio
University of Dayton
University of Electronic Science and Technology of China

Research output: Contribution to journal › Article › peer-review

2 Scopus citations

Abstract

Environmental friendly ferroelectric relaxor Ba(Zr0.₂Ti _0.8)O₃ thin films with an additional 2% Mn dopant were epitaxially fabricated on the (001) LaAlO₃ single crystal substrates by pulsed laser deposition. Microstructure characterizations from X-ray diffraction suggest that the films are c-axis oriented with the interface relationship of [101]Mn:_BZT//[100]_LAO and (001)Mn: _BZT//(001)_LAO. The microwave dielectric property measurements (13-17.5 GHz) reveal that the films have excellent dielectric properties with large tunability, high dielectric constant, and low dielectric loss, which the average value is 25.9%, 169 and 0.054, respectively. It is indicated that the additional 2% Mn doped Ba(Zr0.₂Ti _0.8)O₃ thin films can be used for the development of the room temperature tunable microwave elements and related device applications.

Original language	English
Pages (from-to)	65-69
Number of pages	5
Journal	Ferroelectrics, Letters Section
Volume	40
Issue number	1-3
DOIs	https://doi.org/10.1080/07315171.2013.814487
State	Published - 1 Jan 2013

Keywords

Ba(Zr,Ti)O
Ferroelectric
dielectric
epitaxial
microwave
thin films

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@article{f262f4ee4bff49ff9a310a78a085aa1e,

title = "Microwave dielectric properties of epitaxial mn-doped Ba(Zr,Ti)O 3 thin films on LaAlO 3 substrates",

abstract = "Environmental friendly ferroelectric relaxor Ba(Zr0.2Ti 0.8)O3 thin films with an additional 2\% Mn dopant were epitaxially fabricated on the (001) LaAlO3 single crystal substrates by pulsed laser deposition. Microstructure characterizations from X-ray diffraction suggest that the films are c-axis oriented with the interface relationship of [101]Mn:BZT//[100]LAO and (001)Mn: BZT//(001)LAO. The microwave dielectric property measurements (13-17.5 GHz) reveal that the films have excellent dielectric properties with large tunability, high dielectric constant, and low dielectric loss, which the average value is 25.9\%, 169 and 0.054, respectively. It is indicated that the additional 2\% Mn doped Ba(Zr0.2Ti 0.8)O3 thin films can be used for the development of the room temperature tunable microwave elements and related device applications.",

keywords = "Ba(Zr,Ti)O, Ferroelectric, dielectric, epitaxial, microwave, thin films",

author = "Ming Liu and Chunrui Ma and Jian Liu and Gregory Collins and Chonglin Chen and Alemayehu, \{Andy D.\} and Guru Subramanyam and Chao Dai and Yuan Lin and Amar Bhalla",

year = "2013",

month = jan,

day = "1",

doi = "10.1080/07315171.2013.814487",

language = "英语",

volume = "40",

pages = "65--69",

journal = "Ferroelectrics, Letters Section",

issn = "0731-5171",

publisher = "Taylor and Francis Ltd.",

number = "1-3",

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TY - JOUR

T1 - Microwave dielectric properties of epitaxial mn-doped Ba(Zr,Ti)O 3 thin films on LaAlO 3 substrates

AU - Liu, Ming

AU - Ma, Chunrui

AU - Liu, Jian

AU - Collins, Gregory

AU - Chen, Chonglin

AU - Alemayehu, Andy D.

AU - Subramanyam, Guru

AU - Dai, Chao

AU - Lin, Yuan

AU - Bhalla, Amar

PY - 2013/1/1

Y1 - 2013/1/1

N2 - Environmental friendly ferroelectric relaxor Ba(Zr0.2Ti 0.8)O3 thin films with an additional 2% Mn dopant were epitaxially fabricated on the (001) LaAlO3 single crystal substrates by pulsed laser deposition. Microstructure characterizations from X-ray diffraction suggest that the films are c-axis oriented with the interface relationship of [101]Mn:BZT//[100]LAO and (001)Mn: BZT//(001)LAO. The microwave dielectric property measurements (13-17.5 GHz) reveal that the films have excellent dielectric properties with large tunability, high dielectric constant, and low dielectric loss, which the average value is 25.9%, 169 and 0.054, respectively. It is indicated that the additional 2% Mn doped Ba(Zr0.2Ti 0.8)O3 thin films can be used for the development of the room temperature tunable microwave elements and related device applications.

AB - Environmental friendly ferroelectric relaxor Ba(Zr0.2Ti 0.8)O3 thin films with an additional 2% Mn dopant were epitaxially fabricated on the (001) LaAlO3 single crystal substrates by pulsed laser deposition. Microstructure characterizations from X-ray diffraction suggest that the films are c-axis oriented with the interface relationship of [101]Mn:BZT//[100]LAO and (001)Mn: BZT//(001)LAO. The microwave dielectric property measurements (13-17.5 GHz) reveal that the films have excellent dielectric properties with large tunability, high dielectric constant, and low dielectric loss, which the average value is 25.9%, 169 and 0.054, respectively. It is indicated that the additional 2% Mn doped Ba(Zr0.2Ti 0.8)O3 thin films can be used for the development of the room temperature tunable microwave elements and related device applications.

KW - Ba(Zr,Ti)O

KW - Ferroelectric

KW - dielectric

KW - epitaxial

KW - microwave

KW - thin films

UR - https://www.scopus.com/pages/publications/84882371357

U2 - 10.1080/07315171.2013.814487

DO - 10.1080/07315171.2013.814487

M3 - 文章

AN - SCOPUS:84882371357

SN - 0731-5171

VL - 40

SP - 65

EP - 69

JO - Ferroelectrics, Letters Section

JF - Ferroelectrics, Letters Section

IS - 1-3

ER -

Microwave dielectric properties of epitaxial mn-doped Ba(Zr,Ti)O ₃ thin films on LaAlO ₃ substrates

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Keywords

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