Microwave dielectric properties of bismuth zinc niobate thin films deposited on alumina by pulsed laser deposition

Bi₂Zn_2/3Nb_4/3O₇ thin films were prepared on Al₂O₃ substrates by pulsed laser deposition. The phase compositions and microstructures were characterized by X-ray diffraction and atomic force microscopy. The as-deposited films were all amorphous in nature. All films were crystallized after the post annealing at the temperature range of 700-900 °C for 30 min in air. The texture characteristics change with annealing temperature. A split post dielectric resonator method was used to measure the microwave dielectric performance at the resonant frequencies of 10, 15 and 19 GHz. For the films annealed at 900 °C, the preferential orientation is similar to the monoclinic BZN bulk. The microwave dielectric constants at 10, 15 and 19 GHz are 69.4, 58.9 and 47.9, respectively, which are closer to these of the monoclinic BZN bulk.