Microwave dielectric properties of BaY2(MoO4)4 ceramic with low sintering temperature

Wen Bo Li; Hai Hong Xi; Di Zhou

doi:10.1007/s10854-014-2583-x

Microwave dielectric properties of BaY₂(MoO₄)₄ ceramic with low sintering temperature

Wen Bo Li
, Hai Hong Xi
, Di Zhou

Faculty of Electronic and Information Engineering

Xi'an Jiaotong University

Research output: Contribution to journal › Article › peer-review

10 Scopus citations

Abstract

A low firing microwave dielectric ceramic BaY₂(MoO₄)₄ with monoclinic phase was prepared by using solid state reaction method. Microstructure and microwave dielectric properties of the ceramic were investigated. Optimized microwave dielectric properties were obtained in the ceramic sintered at 925 °C for 2 h with a relative permittivity ~11.5, a Q × f value about 47,200 GHz (at 10.3 GHz) and a temperature coefficient of resonant frequency of −35 ppm/°C. Furthermore, 0.5BaY₂(MoO₄)₄–0.5TiO₂ ceramic sintered at 970 °C for 2 h with a relative permittivity ~13.6, a Q × f value about 30,800 GHz (at 9.6 GHz) and a near zero τ_f value of +0.8 ppm/°C.

Original language	English
Pages (from-to)	1608-1611
Number of pages	4
Journal	Journal of Materials Science: Materials in Electronics
Volume	26
Issue number	3
DOIs	https://doi.org/10.1007/s10854-014-2583-x
State	Published - Mar 2015

Access to Document

10.1007/s10854-014-2583-x

Cite this

@article{73fdfa30782a45c48fb7c4a1342d41fb,

title = "Microwave dielectric properties of BaY2(MoO4)4 ceramic with low sintering temperature",

abstract = "A low firing microwave dielectric ceramic BaY2(MoO4)4 with monoclinic phase was prepared by using solid state reaction method. Microstructure and microwave dielectric properties of the ceramic were investigated. Optimized microwave dielectric properties were obtained in the ceramic sintered at 925 °C for 2 h with a relative permittivity \textasciitilde{}11.5, a Q × f value about 47,200 GHz (at 10.3 GHz) and a temperature coefficient of resonant frequency of −35 ppm/°C. Furthermore, 0.5BaY2(MoO4)4–0.5TiO2 ceramic sintered at 970 °C for 2 h with a relative permittivity \textasciitilde{}13.6, a Q × f value about 30,800 GHz (at 9.6 GHz) and a near zero τf value of +0.8 ppm/°C.",

author = "Li, \{Wen Bo\} and Xi, \{Hai Hong\} and Di Zhou",

note = "Publisher Copyright: {\textcopyright} 2014, Springer Science+Business Media New York.",

year = "2015",

month = mar,

doi = "10.1007/s10854-014-2583-x",

language = "英语",

volume = "26",

pages = "1608--1611",

journal = "Journal of Materials Science: Materials in Electronics",

issn = "0957-4522",

publisher = "Springer New York",

number = "3",

}

TY - JOUR

T1 - Microwave dielectric properties of BaY2(MoO4)4 ceramic with low sintering temperature

AU - Li, Wen Bo

AU - Xi, Hai Hong

AU - Zhou, Di

PY - 2015/3

Y1 - 2015/3

N2 - A low firing microwave dielectric ceramic BaY2(MoO4)4 with monoclinic phase was prepared by using solid state reaction method. Microstructure and microwave dielectric properties of the ceramic were investigated. Optimized microwave dielectric properties were obtained in the ceramic sintered at 925 °C for 2 h with a relative permittivity ~11.5, a Q × f value about 47,200 GHz (at 10.3 GHz) and a temperature coefficient of resonant frequency of −35 ppm/°C. Furthermore, 0.5BaY2(MoO4)4–0.5TiO2 ceramic sintered at 970 °C for 2 h with a relative permittivity ~13.6, a Q × f value about 30,800 GHz (at 9.6 GHz) and a near zero τf value of +0.8 ppm/°C.

AB - A low firing microwave dielectric ceramic BaY2(MoO4)4 with monoclinic phase was prepared by using solid state reaction method. Microstructure and microwave dielectric properties of the ceramic were investigated. Optimized microwave dielectric properties were obtained in the ceramic sintered at 925 °C for 2 h with a relative permittivity ~11.5, a Q × f value about 47,200 GHz (at 10.3 GHz) and a temperature coefficient of resonant frequency of −35 ppm/°C. Furthermore, 0.5BaY2(MoO4)4–0.5TiO2 ceramic sintered at 970 °C for 2 h with a relative permittivity ~13.6, a Q × f value about 30,800 GHz (at 9.6 GHz) and a near zero τf value of +0.8 ppm/°C.

UR - https://www.scopus.com/pages/publications/84925536651

U2 - 10.1007/s10854-014-2583-x

DO - 10.1007/s10854-014-2583-x

M3 - 文章

AN - SCOPUS:84925536651

SN - 0957-4522

VL - 26

SP - 1608

EP - 1611

JO - Journal of Materials Science: Materials in Electronics

JF - Journal of Materials Science: Materials in Electronics

IS - 3

ER -

Microwave dielectric properties of BaY₂(MoO₄)₄ ceramic with low sintering temperature

Abstract

Access to Document

Other files and links

Fingerprint

Cite this