TY - JOUR
T1 - Microstructures and microwave dielectric properties of low-temperature sintered Ca 2Zn 4Ti 15O 36 ceramics
AU - Pang, Li Xia
AU - Wang, Hong
AU - Chen, Yue Hua
AU - Zhou, Di
AU - Yao, Xi
PY - 2009
Y1 - 2009
N2 - Low-temperature sintered Ca 2Zn 4Ti 15 O 36 microwave dielectric ceramic was prepared by conventional solid state reaction method. The influences from V 2 O 5 addition on the sintering behavior, crystalline phases, microstructures and microwave dielectric properties were investigated. The crystalline phases and microstructures of Ca 2 Zn 4Ti 15O 36 ceramic with V 2 O 5 addition were investigated by X-ray diffraction, scanning electron microscopy (SEM) and energy dispersive X-ray spectroscopy (EDS). V 2O 5 addition lowered the sintering temperature of Ca 2Zn 4Ti 15O 36 ceramics from 1140 °C to 930 °C. Ca 2Zn 4 Ti 15O 36 ceramic with 5wt% V 2 O 5 addition could be densified well at 930°C, and showed good microwave dielectric properties of ετ r∼ 46, Q × f ∼ 13400 GHz, and temperature coefficient of resonant frequency (τ f)∼164 ppm/°C.
AB - Low-temperature sintered Ca 2Zn 4Ti 15 O 36 microwave dielectric ceramic was prepared by conventional solid state reaction method. The influences from V 2 O 5 addition on the sintering behavior, crystalline phases, microstructures and microwave dielectric properties were investigated. The crystalline phases and microstructures of Ca 2 Zn 4Ti 15O 36 ceramic with V 2 O 5 addition were investigated by X-ray diffraction, scanning electron microscopy (SEM) and energy dispersive X-ray spectroscopy (EDS). V 2O 5 addition lowered the sintering temperature of Ca 2Zn 4Ti 15O 36 ceramics from 1140 °C to 930 °C. Ca 2Zn 4 Ti 15O 36 ceramic with 5wt% V 2 O 5 addition could be densified well at 930°C, and showed good microwave dielectric properties of ετ r∼ 46, Q × f ∼ 13400 GHz, and temperature coefficient of resonant frequency (τ f)∼164 ppm/°C.
UR - https://www.scopus.com/pages/publications/62249205864
U2 - 10.1007/s10854-008-9760-8
DO - 10.1007/s10854-008-9760-8
M3 - 文章
AN - SCOPUS:62249205864
SN - 0957-4522
VL - 20
SP - 528
EP - 533
JO - Journal of Materials Science: Materials in Electronics
JF - Journal of Materials Science: Materials in Electronics
IS - 6
ER -