Microstructure characterization of Si/C multilayer thin films

  • Ting Han
  • , Gengrong Chang
  • , Yunjin Sun
  • , Fei Ma
  • , Kewei Xu

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

1 Scopus citations

Abstract

Si/C multilayer thin films were prepared by magnetron sputtering and post-annealing in N2 atmosphere at 1100°C for 1h. X-ray diffraction (XRD), Raman scattering and high-resolution transmission electron microscopy (HRTEM) were applied to study the microstructures of the thin films. For the case of Si/C modulation ratio smaller than 1, interlayer diffusion is evident, which promotes the formation of α-SiC during thermal annealing. If the modulation ratio is larger than 1, the Si sublayers are partially crystallized, and the thicker the Si sublayers are, the crystallinity increases. To be excited, brick-shaped nc-Si is directly observed by HRTEM. The brick-shaped nc-Si appears to be more regular near the Si (100) substrate but with twin defects. The results are instructive in the application of solar cells.

Original languageEnglish
Title of host publicationEnergy and Environment Materials
EditorsXinfeng Tang, Ying Wu, Yan Yao, Zengzhi Zhang, Zengzhi Zhang
PublisherTrans Tech Publications Ltd
Pages910-914
Number of pages5
ISBN (Print)9783037856062
DOIs
StatePublished - 2013
EventChinese Materials Congress 2012, CMC 2012 - Taiyuan, China
Duration: 13 Jul 201218 Jul 2012

Publication series

NameMaterials Science Forum
Volume743-744
ISSN (Print)0255-5476
ISSN (Electronic)1662-9752

Conference

ConferenceChinese Materials Congress 2012, CMC 2012
Country/TerritoryChina
CityTaiyuan
Period13/07/1218/07/12

Keywords

  • Magnetron sputtering
  • Microstructure
  • Modulation ratio
  • Si/C mutilayer
  • Solar cell

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