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Microstructure and electrical conductivity of (Y, Sr)CoO3-δ thin films tuned by the film-growth temperature

  • Hong Mei Jing
  • , Guang Liang Hu
  • , Shao Bo Mi
  • , Lu Lu
  • , Ming Liu
  • , Shao Dong Cheng
  • , Sheng Cheng
  • , Chun Lin Jia
  • Xi'an Jiaotong University
  • Jülich Research Centre

Research output: Contribution to journalArticlepeer-review

6 Scopus citations

Abstract

Epitaxial films composed of (Y,Sr)CoO3-δ and nano-scale Y2O3 columns are successfully grown on (La0.289Sr0.712)(Al0.633Ta0.356)O3(001) substrates at 900 °C. The microstructural and electrical properties of the composite films are investigated and compared with those of the single-phase films prepared at 800 °C. In the composite films oxygen vacancies are detectable, which occur alternately in the stacking CoO2-δ planes of (Y,Sr)CoO3-δ. In addition, it is found that a large number of misfit dislocations distribute at the interfaces between the Y2O3 columns and the (Y,Sr)CoO3-δ film matrix. The measured resistivity of the composite films is significantly lower than that of the (Y,Sr)CoO3-δ single-phase films. Our results indicate that the electrical properties of the perovskite-based cobaltates films can be tuned by changing the microstructure through controlling the film-growth temperature.

Original languageEnglish
Pages (from-to)181-185
Number of pages5
JournalJournal of Alloys and Compounds
Volume714
DOIs
StatePublished - 2017

Keywords

  • Electrical properties
  • Electron microscopy
  • Interface
  • Thin films

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