@inproceedings{f1621b2acd6b4efca2df6f9036b8feeb,
title = "Microstructural and Electron-Emission Characteristics of Nb-Si-N Films in Surface-Conduction Electron-Emitter Display",
abstract = "We proposed ternary nitride Nb-Si-N film as a promising surface-conduction electron emitter (SCE) in surface-conduction electron-emitter display (SED). Nb-Si-N films consisted of continuous NbN polycrystalline phase with (Si3-xNb4x)N4 amorphous phase in NbN grain boundaries. After electroforming, serrated nanogaps were observed in Nb-Si-N SCE strips. The emission current of Nb-Si-N SCE array of 1×18 cells was 6.50 μA with anode voltage of 1.5 kV and device voltage of 22 V, indicating satisfying potential for display applications comparing with NbN SCEs.",
keywords = "Nb-Si-N, Surface conduction electron-emitter display, electroforming, microstructure",
author = "Huiyan Wu and Jianfeng Wang and Zhongxiao Song and Shengli Wu and Yanhuai Li and Siliang Xiong and Kewei Xu and Chunliang Liu",
note = "Publisher Copyright: {\textcopyright} 2009 Published by Elsevier B.V.; 18th International Vacuum Congress, IVC 2010 ; Conference date: 23-08-2010 Through 27-08-2010",
year = "2012",
doi = "10.1016/j.phpro.2012.03.531",
language = "英语",
series = "Physics Procedia",
publisher = "Elsevier B.V.",
pages = "139--143",
editor = "Feng Pan and Xu Chen",
booktitle = "18th International Vacuum Congress, IVC 2010",
}