Microelectromechanical systems-based electrostatic field sensor using Pb(Zr, Ti)O3 thin films

Takeshi Kobayashi; Syoji Oyama; Masaharu Takahashi; Ryutaro Maeda; Toshihiro Itoh

doi:10.1143/JJAP.47.7533

Microelectromechanical systems-based electrostatic field sensor using Pb(Zr, Ti)O₃ thin films

Takeshi Kobayashi
, Syoji Oyama
, Masaharu Takahashi
, Ryutaro Maeda
, Toshihiro Itoh

School of Instrument Science and Technology

Research output: Contribution to journal › Article › peer-review

48 Scopus citations

Abstract

We have developed microelectromechanical system (MEMS)-based electrostatic field sensors using Pb(Zr,Ti)O₃ thin films. Multilayers of Pt/Ti/PZT/Pt/Ti/SiO₂ deposited on silicon-on-insulator (SOI) wafers have been fabricated into the sensors through MEMS microfabrication technology. The resonant frequency of the fabricated sensors is within 1700-1800 Hz. The developed MEMS-based electrostatic field sensors have shown a good linear response to the voltage of an electrified body, which is comparable to that of commercially available electrostatic field sensors.

Original language	English
Pages (from-to)	7533-7536
Number of pages	4
Journal	Japanese Journal of Applied Physics
Volume	47
Issue number	9 PART 2
DOIs	https://doi.org/10.1143/JJAP.47.7533
State	Published - 19 Sep 2008

Keywords

Electric field sensor
Electrostatic field sensor
MEMS
Piezoelectric
PZT

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10.1143/JJAP.47.7533

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title = "Microelectromechanical systems-based electrostatic field sensor using Pb(Zr, Ti)O3 thin films",

abstract = "We have developed microelectromechanical system (MEMS)-based electrostatic field sensors using Pb(Zr,Ti)O3 thin films. Multilayers of Pt/Ti/PZT/Pt/Ti/SiO2 deposited on silicon-on-insulator (SOI) wafers have been fabricated into the sensors through MEMS microfabrication technology. The resonant frequency of the fabricated sensors is within 1700-1800 Hz. The developed MEMS-based electrostatic field sensors have shown a good linear response to the voltage of an electrified body, which is comparable to that of commercially available electrostatic field sensors.",

keywords = "Electric field sensor, Electrostatic field sensor, MEMS, Piezoelectric, PZT",

author = "Takeshi Kobayashi and Syoji Oyama and Masaharu Takahashi and Ryutaro Maeda and Toshihiro Itoh",

year = "2008",

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AU - Kobayashi, Takeshi

AU - Oyama, Syoji

AU - Takahashi, Masaharu

AU - Maeda, Ryutaro

AU - Itoh, Toshihiro

PY - 2008/9/19

Y1 - 2008/9/19

N2 - We have developed microelectromechanical system (MEMS)-based electrostatic field sensors using Pb(Zr,Ti)O3 thin films. Multilayers of Pt/Ti/PZT/Pt/Ti/SiO2 deposited on silicon-on-insulator (SOI) wafers have been fabricated into the sensors through MEMS microfabrication technology. The resonant frequency of the fabricated sensors is within 1700-1800 Hz. The developed MEMS-based electrostatic field sensors have shown a good linear response to the voltage of an electrified body, which is comparable to that of commercially available electrostatic field sensors.

AB - We have developed microelectromechanical system (MEMS)-based electrostatic field sensors using Pb(Zr,Ti)O3 thin films. Multilayers of Pt/Ti/PZT/Pt/Ti/SiO2 deposited on silicon-on-insulator (SOI) wafers have been fabricated into the sensors through MEMS microfabrication technology. The resonant frequency of the fabricated sensors is within 1700-1800 Hz. The developed MEMS-based electrostatic field sensors have shown a good linear response to the voltage of an electrified body, which is comparable to that of commercially available electrostatic field sensors.

KW - Electric field sensor

KW - Electrostatic field sensor

KW - MEMS

KW - Piezoelectric

KW - PZT

UR - https://www.scopus.com/pages/publications/55149094321

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M3 - 文章

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JO - Japanese Journal of Applied Physics

JF - Japanese Journal of Applied Physics

IS - 9 PART 2

ER -

Microelectromechanical systems-based electrostatic field sensor using Pb(Zr, Ti)O₃ thin films

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Keywords

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