Method of fabricating multiple-frequency film bulk acoustic resonators in a single chip

  • Li Peng Wang
  • , Eyal Ginsburg
  • , Dora Diamant
  • , Qing Ma
  • , Zhenyu Huang
  • , Zhigang Suo

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

4 Scopus citations

Abstract

We report experimental results of a novel approach to integrate multiple-frequency film bulk acoustic resonators (FBAR) in a single chip. An additional tuning layer was deposited and patterned on a conventional Metal/AIN/Metal FBAR film stack. By controlling in-plane dimensions of the periodic tuning patterns, resonance frequencies are modulated according to the corresponding loading percentages. To obtain a desirable frequency response of the modulated resonance peaks (a pure frequency shift), the pitch of the tuning patterns needs to be smaller than the membrane thickness. Three thicknesses of the tuning layers are fabricated to demonstrate different tuning ranges and sensitivities. This approach provides a potential solution to integrate multiple-frequency FBAR filters of adjacent bands by only one additional lithographic patterning step.

Original languageEnglish
Title of host publication2006 IEEE International Frequency Control Symposium and Exposition
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages793-796
Number of pages4
ISBN (Print)1424400740, 9781424400744
DOIs
StatePublished - 2006
Externally publishedYes
Event2006 IEEE International Frequency Control Symposium and Exposition - Miami, FL, United States
Duration: 4 Jun 20067 Jun 2006

Publication series

NameProceedings of the IEEE International Frequency Control Symposium and Exposition

Conference

Conference2006 IEEE International Frequency Control Symposium and Exposition
Country/TerritoryUnited States
CityMiami, FL
Period4/06/067/06/06

Fingerprint

Dive into the research topics of 'Method of fabricating multiple-frequency film bulk acoustic resonators in a single chip'. Together they form a unique fingerprint.

Cite this