Metal ion formed conductive filaments by redox process induced nonvolatile resistive switching memories in MoS                         2                          film

Yudong Xia; Bai Sun; Hongyan Wang; Guangdong Zhou; Xiang Kan; Yong Zhang; Yong Zhao

doi:10.1016/j.apsusc.2017.07.257

Metal ion formed conductive filaments by redox process induced nonvolatile resistive switching memories in MoS ₂ film

Yudong Xia
, Bai Sun
, Hongyan Wang
, Guangdong Zhou
, Xiang Kan
, Yong Zhang
, Yong Zhao

Southwest Jiaotong University
University of Electronic Science and Technology of China
Southwest University

Research output: Contribution to journal › Article › peer-review

58 Scopus citations

Abstract

In this work, the resistive switching mechanism of metal/MoS ₂ /Ti/Si devices with different metal acts top electrode materials have been investigated. The device represents an outstanding memory behavior with larger storage window when using Ag acts top electrode. This work reveals that Ag filaments can be easily formed by redox process in MoS ₂ film.

Original language	English
Pages (from-to)	812-816
Number of pages	5
Journal	Applied Surface Science
Volume	426
DOIs	https://doi.org/10.1016/j.apsusc.2017.07.257
State	Published - 31 Dec 2017
Externally published	Yes

Keywords

Conductive filaments
MoS film
Nonvolatile
Redox process
Resistive switching

Access to Document

10.1016/j.apsusc.2017.07.257

Cite this

Xia, Y., Sun, B., Wang, H., Zhou, G., Kan, X., Zhang, Y., & Zhao, Y. (2017). Metal ion formed conductive filaments by redox process induced nonvolatile resistive switching memories in MoS ₂ film Applied Surface Science, 426, 812-816. https://doi.org/10.1016/j.apsusc.2017.07.257

@article{bc15a5c14fb247739b3151093dbf5ac8,

title = " Metal ion formed conductive filaments by redox process induced nonvolatile resistive switching memories in MoS 2 film ",

abstract = " In this work, the resistive switching mechanism of metal/MoS 2 /Ti/Si devices with different metal acts top electrode materials have been investigated. The device represents an outstanding memory behavior with larger storage window when using Ag acts top electrode. This work reveals that Ag filaments can be easily formed by redox process in MoS 2 film.",

keywords = "Conductive filaments, MoS film, Nonvolatile, Redox process, Resistive switching",

author = "Yudong Xia and Bai Sun and Hongyan Wang and Guangdong Zhou and Xiang Kan and Yong Zhang and Yong Zhao",

note = "Publisher Copyright: {\textcopyright} 2017 Elsevier B.V.",

year = "2017",

month = dec,

day = "31",

doi = "10.1016/j.apsusc.2017.07.257",

language = "英语",

volume = "426",

pages = "812--816",

journal = "Applied Surface Science",

issn = "0169-4332",

publisher = "Elsevier B.V.",

}

Xia, Y, Sun, B, Wang, H, Zhou, G, Kan, X, Zhang, Y & Zhao, Y 2017, ' Metal ion formed conductive filaments by redox process induced nonvolatile resistive switching memories in MoS ₂ film ', Applied Surface Science, vol. 426, pp. 812-816. https://doi.org/10.1016/j.apsusc.2017.07.257

Metal ion formed conductive filaments by redox process induced nonvolatile resistive switching memories in MoS ₂ film . / Xia, Yudong; Sun, Bai; Wang, Hongyan et al.
In: Applied Surface Science, Vol. 426, 31.12.2017, p. 812-816.

Research output: Contribution to journal › Article › peer-review

TY - JOUR

T1 - Metal ion formed conductive filaments by redox process induced nonvolatile resistive switching memories in MoS 2 film

AU - Xia, Yudong

AU - Sun, Bai

AU - Wang, Hongyan

AU - Zhou, Guangdong

AU - Kan, Xiang

AU - Zhang, Yong

AU - Zhao, Yong

PY - 2017/12/31

Y1 - 2017/12/31

N2 - In this work, the resistive switching mechanism of metal/MoS 2 /Ti/Si devices with different metal acts top electrode materials have been investigated. The device represents an outstanding memory behavior with larger storage window when using Ag acts top electrode. This work reveals that Ag filaments can be easily formed by redox process in MoS 2 film.

AB - In this work, the resistive switching mechanism of metal/MoS 2 /Ti/Si devices with different metal acts top electrode materials have been investigated. The device represents an outstanding memory behavior with larger storage window when using Ag acts top electrode. This work reveals that Ag filaments can be easily formed by redox process in MoS 2 film.

KW - Conductive filaments

KW - MoS film

KW - Nonvolatile

KW - Redox process

KW - Resistive switching

UR - https://www.scopus.com/pages/publications/85026781749

U2 - 10.1016/j.apsusc.2017.07.257

DO - 10.1016/j.apsusc.2017.07.257

M3 - 文章

AN - SCOPUS:85026781749

SN - 0169-4332

VL - 426

SP - 812

EP - 816

JO - Applied Surface Science

JF - Applied Surface Science

ER -

Metal ion formed conductive filaments by redox process induced nonvolatile resistive switching memories in MoS ₂ film

Abstract

Keywords

Access to Document

Other files and links

Fingerprint

Cite this