@inproceedings{8002e198c72d4959b7a834b81e3990f8,
title = "MEMS Pressure Sensor Based on Piezoresistive Effect of MoS2 Film",
abstract = "Molybdenum disulfide (MoS2) has excellent electrical and mechanical properties and can be used as sensors. 2D MoS2 is commonly used in sensors and is poorly compatible with MEMS. This paper found that the deposited vertical nanosheets of layered disulfide clamps have excellent piezoresistive properties, which can be prepared in large areas. Its piezoresistive mechanism is attributed to the fact that the tension or compression of the substrate with the stress of the substrate causes an increase or decrease in the spacing of the MoS2 nanosheets between the layers, which results in a change in the resistance of the nanosheets between the layers. The piezoresistive factor of the MoS2 film was about 35. The MEMS pressure sensor based on novel MoS2 nanosheets was developed. The sensor showed a nonlinear error of 3.11\%FS, a repeatability error of 1.75\%FS, a hysteresis error of 0.74\%FS, and basic accuracy of 3.64\%FS.",
keywords = "MEMS, MoS, Piezoresistive, Sensor",
author = "Xing Pang and Qi Zhang and Xiaoya Liang and Yulong Zhao",
note = "Publisher Copyright: {\textcopyright} 2023 IEEE.; 2023 IEEE SENSORS, SENSORS 2023 ; Conference date: 29-10-2023 Through 01-11-2023",
year = "2023",
doi = "10.1109/SENSORS56945.2023.10324905",
language = "英语",
series = "Proceedings of IEEE Sensors",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
booktitle = "2023 IEEE SENSORS, SENSORS 2023 - Conference Proceedings",
}