Measurement of linewidth for nano-scale lines prepared by multilayer thin films

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

One-dimensional lines with nanometer scale are prepared by using multilayer thin films deposition technique. The Ti/SiO2 multilayer thin films are systematically deposited on silicon substrates in the conventional electron-beam evaporation system. Then a single nanometer scale line can be obtained on the cleaved cross-section of one multilayer thin films structure. The linewidth has been measured by analyzing top-down scanning electron microscope (SEM) images on-line and the linewidth measured is less than 20 nm. In addition, off-line analysis of these images based on image processing technique is performed to measure linewidth accurately. The edges of nanometer lines are detected by image processing and analysis technique. A nanoscale linewidth measurement method based on image processing and analysis technique was put forward.

Original languageEnglish
Title of host publicationProceedings of the 2nd IEEE International Conference on Nano/Micro Engineered and Molecular Systems, IEEE NEMS 2007
Pages683-686
Number of pages4
DOIs
StatePublished - 2007
Event2007 2nd IEEE International Conference on Nano/Micro Engineered and Molecular Systems, IEEE NEMS 2007 - Bangkok, Thailand
Duration: 16 Jan 200719 Jan 2007

Publication series

NameProceedings of the 2nd IEEE International Conference on Nano/Micro Engineered and Molecular Systems, IEEE NEMS 2007

Conference

Conference2007 2nd IEEE International Conference on Nano/Micro Engineered and Molecular Systems, IEEE NEMS 2007
Country/TerritoryThailand
CityBangkok
Period16/01/0719/01/07

Keywords

  • Image segmentation
  • Linewidth
  • Multilayer thin films
  • Scanning electrochemical microscopy

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