Measurement of linewidth and line edge roughness for ID nano CD linewidth standard product lines

Guo Q. Han; Zhuang D. Jiang; Wei X. Jing; Ming Z. Zhu

doi:10.1109/NANO.2007.4601299

Measurement of linewidth and line edge roughness for ID nano CD linewidth standard product lines

Guo Q. Han
, Zhuang D. Jiang
, Wei X. Jing
, Ming Z. Zhu

School of Mechanical Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

One-dimensional nano CD (NCD) linewidth standard product lines are prepared using multilayer thin films deposition technique. The Ti/SiO2 multilayer thin films are systematically deposited on silicon substrates in the conventional electron-beam evaporation system. Then a single nanometer scale line can be obtained on the cleaved cross-section of one multilayer thin films structure. The linewidth and line edge roughness (LER) have been evaluated by analyzing top-down scanning electron microscope (SEM) images off-line using image processing techniques. The average linewidth is less than 25 nm and LER is estimated.

Original language	English
Title of host publication	2007 7th IEEE International Conference on Nanotechnology - IEEE-NANO 2007, Proceedings
Pages	769-772
Number of pages	4
DOIs	https://doi.org/10.1109/NANO.2007.4601299
State	Published - 2007
Event	2007 7th IEEE International Conference on Nanotechnology - IEEE-NANO 2007 - Hong Kong, China Duration: 2 Aug 2007 → 5 Aug 2007

Publication series

Name	2007 7th IEEE International Conference on Nanotechnology - IEEE-NANO 2007, Proceedings

Conference

Conference	2007 7th IEEE International Conference on Nanotechnology - IEEE-NANO 2007
Country/Territory	China
City	Hong Kong
Period	2/08/07 → 5/08/07

Keywords

Image segmentation
Line edge roughness
Linewidth
Multilayer thin films
Scanning electrochemical microscopy

Access to Document

10.1109/NANO.2007.4601299

Cite this

Han, G. Q., Jiang, Z. D., Jing, W. X., & Zhu, M. Z. (2007). Measurement of linewidth and line edge roughness for ID nano CD linewidth standard product lines. In 2007 7th IEEE International Conference on Nanotechnology - IEEE-NANO 2007, Proceedings (pp. 769-772). Article 4601299 (2007 7th IEEE International Conference on Nanotechnology - IEEE-NANO 2007, Proceedings). https://doi.org/10.1109/NANO.2007.4601299

@inproceedings{543e7946cc5d4eb1a785fe4b3abc678c,

title = "Measurement of linewidth and line edge roughness for ID nano CD linewidth standard product lines",

abstract = "One-dimensional nano CD (NCD) linewidth standard product lines are prepared using multilayer thin films deposition technique. The Ti/SiO2 multilayer thin films are systematically deposited on silicon substrates in the conventional electron-beam evaporation system. Then a single nanometer scale line can be obtained on the cleaved cross-section of one multilayer thin films structure. The linewidth and line edge roughness (LER) have been evaluated by analyzing top-down scanning electron microscope (SEM) images off-line using image processing techniques. The average linewidth is less than 25 nm and LER is estimated.",

keywords = "Image segmentation, Line edge roughness, Linewidth, Multilayer thin films, Scanning electrochemical microscopy",

author = "Han, \{Guo Q.\} and Jiang, \{Zhuang D.\} and Jing, \{Wei X.\} and Zhu, \{Ming Z.\}",

year = "2007",

doi = "10.1109/NANO.2007.4601299",

language = "英语",

isbn = "1424406080",

series = "2007 7th IEEE International Conference on Nanotechnology - IEEE-NANO 2007, Proceedings",

pages = "769--772",

booktitle = "2007 7th IEEE International Conference on Nanotechnology - IEEE-NANO 2007, Proceedings",

note = "2007 7th IEEE International Conference on Nanotechnology - IEEE-NANO 2007 ; Conference date: 02-08-2007 Through 05-08-2007",

}

Han, GQ, Jiang, ZD, Jing, WX & Zhu, MZ 2007, Measurement of linewidth and line edge roughness for ID nano CD linewidth standard product lines. in 2007 7th IEEE International Conference on Nanotechnology - IEEE-NANO 2007, Proceedings., 4601299, 2007 7th IEEE International Conference on Nanotechnology - IEEE-NANO 2007, Proceedings, pp. 769-772, 2007 7th IEEE International Conference on Nanotechnology - IEEE-NANO 2007, Hong Kong, China, 2/08/07. https://doi.org/10.1109/NANO.2007.4601299

Measurement of linewidth and line edge roughness for ID nano CD linewidth standard product lines. / Han, Guo Q.; Jiang, Zhuang D.; Jing, Wei X. et al.
2007 7th IEEE International Conference on Nanotechnology - IEEE-NANO 2007, Proceedings. 2007. p. 769-772 4601299 (2007 7th IEEE International Conference on Nanotechnology - IEEE-NANO 2007, Proceedings).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Measurement of linewidth and line edge roughness for ID nano CD linewidth standard product lines

AU - Han, Guo Q.

AU - Jiang, Zhuang D.

AU - Jing, Wei X.

AU - Zhu, Ming Z.

PY - 2007

Y1 - 2007

N2 - One-dimensional nano CD (NCD) linewidth standard product lines are prepared using multilayer thin films deposition technique. The Ti/SiO2 multilayer thin films are systematically deposited on silicon substrates in the conventional electron-beam evaporation system. Then a single nanometer scale line can be obtained on the cleaved cross-section of one multilayer thin films structure. The linewidth and line edge roughness (LER) have been evaluated by analyzing top-down scanning electron microscope (SEM) images off-line using image processing techniques. The average linewidth is less than 25 nm and LER is estimated.

AB - One-dimensional nano CD (NCD) linewidth standard product lines are prepared using multilayer thin films deposition technique. The Ti/SiO2 multilayer thin films are systematically deposited on silicon substrates in the conventional electron-beam evaporation system. Then a single nanometer scale line can be obtained on the cleaved cross-section of one multilayer thin films structure. The linewidth and line edge roughness (LER) have been evaluated by analyzing top-down scanning electron microscope (SEM) images off-line using image processing techniques. The average linewidth is less than 25 nm and LER is estimated.

KW - Image segmentation

KW - Line edge roughness

KW - Linewidth

KW - Multilayer thin films

KW - Scanning electrochemical microscopy

UR - https://www.scopus.com/pages/publications/52949139472

U2 - 10.1109/NANO.2007.4601299

DO - 10.1109/NANO.2007.4601299

M3 - 会议稿件

AN - SCOPUS:52949139472

SN - 1424406080

SN - 9781424406081

T3 - 2007 7th IEEE International Conference on Nanotechnology - IEEE-NANO 2007, Proceedings

SP - 769

EP - 772

BT - 2007 7th IEEE International Conference on Nanotechnology - IEEE-NANO 2007, Proceedings

T2 - 2007 7th IEEE International Conference on Nanotechnology - IEEE-NANO 2007

Y2 - 2 August 2007 through 5 August 2007

ER -

Han GQ, Jiang ZD, Jing WX, Zhu MZ. Measurement of linewidth and line edge roughness for ID nano CD linewidth standard product lines. In 2007 7th IEEE International Conference on Nanotechnology - IEEE-NANO 2007, Proceedings. 2007. p. 769-772. 4601299. (2007 7th IEEE International Conference on Nanotechnology - IEEE-NANO 2007, Proceedings). doi: 10.1109/NANO.2007.4601299

Measurement of linewidth and line edge roughness for ID nano CD linewidth standard product lines

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