Mass fabrication of 4H-SiC high temperature pressure sensors by femtosecond laser etching

Lukang Wang; You Zhao; Yulong Zhao; Yu Yang; Bo Li; Taobo Gong

doi:10.1109/NEMS51815.2021.9451358

Mass fabrication of 4H-SiC high temperature pressure sensors by femtosecond laser etching

Lukang Wang
, You Zhao
, Yulong Zhao
, Yu Yang
, Bo Li
, Taobo Gong

School of Mechanical Engineering

Xi'an Jiaotong University

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

6 Scopus citations

Abstract

4H Silicon carbide (4H-SiC) is one of the most promising materials for pressure sensing in harsh environments. Due to the low efficiency and high energy consumption of dry etching process, mass manufacturing of SiC pressure sensors has always been a challenging problem. A Yb:KGW femtosecond laser was used to perform the circular diaphragms of bulk 4H-SiC by parallel straight line scanning. Small dimension errors and low surface roughness in rapid etching process were measured. This indicates the potential of utilising the femtosecond laser scanning approach to mass-fabricate bulk SiC sensor chips for pressure sensing.

Original language	English
Title of host publication	Proceedings of the 16th Annual IEEE International Conference on Nano/Micro Engineered and Molecular Systems, NEMS 2021
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	1478-1481
Number of pages	4
ISBN (Electronic)	9781665419413
DOIs	https://doi.org/10.1109/NEMS51815.2021.9451358
State	Published - 25 Apr 2021
Event	16th Annual IEEE International Conference on Nano/Micro Engineered and Molecular Systems, NEMS 2021 - Xiamen, China Duration: 25 Apr 2021 → 29 Apr 2021

Publication series

Name	Proceedings of the 16th Annual IEEE International Conference on Nano/Micro Engineered and Molecular Systems, NEMS 2021

Conference

Conference	16th Annual IEEE International Conference on Nano/Micro Engineered and Molecular Systems, NEMS 2021
Country/Territory	China
City	Xiamen
Period	25/04/21 → 29/04/21

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

SDG 7 Affordable and Clean Energy

Keywords

4H-SiC
femtosecond laser
mass fabrication
pressure sensor

Access to Document

10.1109/NEMS51815.2021.9451358

Cite this

Wang, L., Zhao, Y., Zhao, Y., Yang, Y., Li, B., & Gong, T. (2021). Mass fabrication of 4H-SiC high temperature pressure sensors by femtosecond laser etching. In Proceedings of the 16th Annual IEEE International Conference on Nano/Micro Engineered and Molecular Systems, NEMS 2021 (pp. 1478-1481). Article 9451358 (Proceedings of the 16th Annual IEEE International Conference on Nano/Micro Engineered and Molecular Systems, NEMS 2021). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/NEMS51815.2021.9451358

Wang, Lukang ; Zhao, You ; Zhao, Yulong et al. / Mass fabrication of 4H-SiC high temperature pressure sensors by femtosecond laser etching. Proceedings of the 16th Annual IEEE International Conference on Nano/Micro Engineered and Molecular Systems, NEMS 2021. Institute of Electrical and Electronics Engineers Inc., 2021. pp. 1478-1481 (Proceedings of the 16th Annual IEEE International Conference on Nano/Micro Engineered and Molecular Systems, NEMS 2021).

@inproceedings{f2107d2c93d941599c4d471d6f0e3ded,

title = "Mass fabrication of 4H-SiC high temperature pressure sensors by femtosecond laser etching",

abstract = "4H Silicon carbide (4H-SiC) is one of the most promising materials for pressure sensing in harsh environments. Due to the low efficiency and high energy consumption of dry etching process, mass manufacturing of SiC pressure sensors has always been a challenging problem. A Yb:KGW femtosecond laser was used to perform the circular diaphragms of bulk 4H-SiC by parallel straight line scanning. Small dimension errors and low surface roughness in rapid etching process were measured. This indicates the potential of utilising the femtosecond laser scanning approach to mass-fabricate bulk SiC sensor chips for pressure sensing.",

keywords = "4H-SiC, femtosecond laser, mass fabrication, pressure sensor",

author = "Lukang Wang and You Zhao and Yulong Zhao and Yu Yang and Bo Li and Taobo Gong",

note = "Publisher Copyright: {\textcopyright} 2021 IEEE.; 16th Annual IEEE International Conference on Nano/Micro Engineered and Molecular Systems, NEMS 2021 ; Conference date: 25-04-2021 Through 29-04-2021",

year = "2021",

month = apr,

day = "25",

doi = "10.1109/NEMS51815.2021.9451358",

language = "英语",

series = "Proceedings of the 16th Annual IEEE International Conference on Nano/Micro Engineered and Molecular Systems, NEMS 2021",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

pages = "1478--1481",

booktitle = "Proceedings of the 16th Annual IEEE International Conference on Nano/Micro Engineered and Molecular Systems, NEMS 2021",

}

Wang, L, Zhao, Y, Zhao, Y, Yang, Y, Li, B & Gong, T 2021, Mass fabrication of 4H-SiC high temperature pressure sensors by femtosecond laser etching. in Proceedings of the 16th Annual IEEE International Conference on Nano/Micro Engineered and Molecular Systems, NEMS 2021., 9451358, Proceedings of the 16th Annual IEEE International Conference on Nano/Micro Engineered and Molecular Systems, NEMS 2021, Institute of Electrical and Electronics Engineers Inc., pp. 1478-1481, 16th Annual IEEE International Conference on Nano/Micro Engineered and Molecular Systems, NEMS 2021, Xiamen, China, 25/04/21. https://doi.org/10.1109/NEMS51815.2021.9451358

Mass fabrication of 4H-SiC high temperature pressure sensors by femtosecond laser etching. / Wang, Lukang; Zhao, You; Zhao, Yulong et al.
Proceedings of the 16th Annual IEEE International Conference on Nano/Micro Engineered and Molecular Systems, NEMS 2021. Institute of Electrical and Electronics Engineers Inc., 2021. p. 1478-1481 9451358 (Proceedings of the 16th Annual IEEE International Conference on Nano/Micro Engineered and Molecular Systems, NEMS 2021).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Mass fabrication of 4H-SiC high temperature pressure sensors by femtosecond laser etching

AU - Wang, Lukang

AU - Zhao, You

AU - Zhao, Yulong

AU - Yang, Yu

AU - Li, Bo

AU - Gong, Taobo

PY - 2021/4/25

Y1 - 2021/4/25

N2 - 4H Silicon carbide (4H-SiC) is one of the most promising materials for pressure sensing in harsh environments. Due to the low efficiency and high energy consumption of dry etching process, mass manufacturing of SiC pressure sensors has always been a challenging problem. A Yb:KGW femtosecond laser was used to perform the circular diaphragms of bulk 4H-SiC by parallel straight line scanning. Small dimension errors and low surface roughness in rapid etching process were measured. This indicates the potential of utilising the femtosecond laser scanning approach to mass-fabricate bulk SiC sensor chips for pressure sensing.

AB - 4H Silicon carbide (4H-SiC) is one of the most promising materials for pressure sensing in harsh environments. Due to the low efficiency and high energy consumption of dry etching process, mass manufacturing of SiC pressure sensors has always been a challenging problem. A Yb:KGW femtosecond laser was used to perform the circular diaphragms of bulk 4H-SiC by parallel straight line scanning. Small dimension errors and low surface roughness in rapid etching process were measured. This indicates the potential of utilising the femtosecond laser scanning approach to mass-fabricate bulk SiC sensor chips for pressure sensing.

KW - 4H-SiC

KW - femtosecond laser

KW - mass fabrication

KW - pressure sensor

UR - https://www.scopus.com/pages/publications/85113344117

U2 - 10.1109/NEMS51815.2021.9451358

DO - 10.1109/NEMS51815.2021.9451358

M3 - 会议稿件

AN - SCOPUS:85113344117

T3 - Proceedings of the 16th Annual IEEE International Conference on Nano/Micro Engineered and Molecular Systems, NEMS 2021

SP - 1478

EP - 1481

BT - Proceedings of the 16th Annual IEEE International Conference on Nano/Micro Engineered and Molecular Systems, NEMS 2021

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 16th Annual IEEE International Conference on Nano/Micro Engineered and Molecular Systems, NEMS 2021

Y2 - 25 April 2021 through 29 April 2021

ER -

Wang L, Zhao Y, Zhao Y, Yang Y, Li B, Gong T. Mass fabrication of 4H-SiC high temperature pressure sensors by femtosecond laser etching. In Proceedings of the 16th Annual IEEE International Conference on Nano/Micro Engineered and Molecular Systems, NEMS 2021. Institute of Electrical and Electronics Engineers Inc. 2021. p. 1478-1481. 9451358. (Proceedings of the 16th Annual IEEE International Conference on Nano/Micro Engineered and Molecular Systems, NEMS 2021). doi: 10.1109/NEMS51815.2021.9451358

Mass fabrication of 4H-SiC high temperature pressure sensors by femtosecond laser etching

Abstract

Publication series

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UN SDGs

Keywords

Access to Document

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