Magnetic properties of ultrathin γ-Fe2O3 films grown on silicon substrate

Bai Sun; Xiao Peng Li; Wen Xi Zhao; Peng Chen

doi:10.1109/TMAG.2013.2279932

Magnetic properties of ultrathin γ-Fe₂O₃ films grown on silicon substrate

Bai Sun
, Xiao Peng Li
, Wen Xi Zhao
, Peng Chen

Frontier Institute of Science and Technology

Southwest University

Research output: Contribution to journal › Article › peer-review

3 Scopus citations

Abstract

The effect of thickness and annealing temperature on the room-temperature magnetic properties of ultrathin γ-Fe₂O₃ films grown on silicon substrate were investigated. Ultrathin γ-Fe₂O ₃ films were grown on silicon substrates by ion beam sputtering. The saturation magnetization and coercive force of samples at room temperature increase with increasing of annealing temperature and decrease at annealing temperatures above 600°C. The saturation magnetization of samples at room temperature decreases with increasing of γ-Fe₂O₃ thickness. The γ-Fe₂O₃ samples about 3-6 nm thick annealed at 600°C show saturation magnetization of about 360-410 emu/cm ³, which is close to the bulk value of about 390 emu/cm³ within the error range.

Original language	English
Article number	2279932
Journal	IEEE Transactions on Magnetics
Volume	50
Issue number	1
DOIs	https://doi.org/10.1109/TMAG.2013.2279932
State	Published - Jan 2014

Keywords

Annealing temperature
Magnetic properties
Silicon substrate
Thickness

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10.1109/TMAG.2013.2279932

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title = "Magnetic properties of ultrathin γ-Fe2O3 films grown on silicon substrate",

abstract = "The effect of thickness and annealing temperature on the room-temperature magnetic properties of ultrathin γ-Fe2O3 films grown on silicon substrate were investigated. Ultrathin γ-Fe2O 3 films were grown on silicon substrates by ion beam sputtering. The saturation magnetization and coercive force of samples at room temperature increase with increasing of annealing temperature and decrease at annealing temperatures above 600°C. The saturation magnetization of samples at room temperature decreases with increasing of γ-Fe2O3 thickness. The γ-Fe2O3 samples about 3-6 nm thick annealed at 600°C show saturation magnetization of about 360-410 emu/cm 3, which is close to the bulk value of about 390 emu/cm3 within the error range.",

keywords = "Annealing temperature, Magnetic properties, Silicon substrate, Thickness",

author = "Bai Sun and Li, \{Xiao Peng\} and Zhao, \{Wen Xi\} and Peng Chen",

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T1 - Magnetic properties of ultrathin γ-Fe2O3 films grown on silicon substrate

AU - Sun, Bai

AU - Li, Xiao Peng

AU - Zhao, Wen Xi

AU - Chen, Peng

PY - 2014/1

Y1 - 2014/1

N2 - The effect of thickness and annealing temperature on the room-temperature magnetic properties of ultrathin γ-Fe2O3 films grown on silicon substrate were investigated. Ultrathin γ-Fe2O 3 films were grown on silicon substrates by ion beam sputtering. The saturation magnetization and coercive force of samples at room temperature increase with increasing of annealing temperature and decrease at annealing temperatures above 600°C. The saturation magnetization of samples at room temperature decreases with increasing of γ-Fe2O3 thickness. The γ-Fe2O3 samples about 3-6 nm thick annealed at 600°C show saturation magnetization of about 360-410 emu/cm 3, which is close to the bulk value of about 390 emu/cm3 within the error range.

AB - The effect of thickness and annealing temperature on the room-temperature magnetic properties of ultrathin γ-Fe2O3 films grown on silicon substrate were investigated. Ultrathin γ-Fe2O 3 films were grown on silicon substrates by ion beam sputtering. The saturation magnetization and coercive force of samples at room temperature increase with increasing of annealing temperature and decrease at annealing temperatures above 600°C. The saturation magnetization of samples at room temperature decreases with increasing of γ-Fe2O3 thickness. The γ-Fe2O3 samples about 3-6 nm thick annealed at 600°C show saturation magnetization of about 360-410 emu/cm 3, which is close to the bulk value of about 390 emu/cm3 within the error range.

KW - Annealing temperature

KW - Magnetic properties

KW - Silicon substrate

KW - Thickness

UR - https://www.scopus.com/pages/publications/84904364304

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DO - 10.1109/TMAG.2013.2279932

M3 - 文章

AN - SCOPUS:84904364304

SN - 0018-9464

VL - 50

JO - IEEE Transactions on Magnetics

JF - IEEE Transactions on Magnetics

IS - 1

M1 - 2279932

ER -

Magnetic properties of ultrathin γ-Fe₂O₃ films grown on silicon substrate

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Keywords

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