TY - GEN
T1 - Magnetic Integration for GaN-based DC-DC Converters
AU - Yu, Longyang
AU - Yang, Chengzi
AU - Li, Chaojie
AU - Wu, Min
AU - Zhou, Xiang
AU - Wang, Laili
N1 - Publisher Copyright:
© 2020 IEEE.
PY - 2020/9/23
Y1 - 2020/9/23
N2 - With the emerging technology of wide-band-gap power semiconductors and modern ferrite materials, the switching frequency of DC-DC converters based on gallium nitride devices (GaN) can be further pushed to megahertz range. The number of magnetic core is bottleneck of achieving both low cost and high power density. In this paper, a novel magnetic structure with a four-leg magnetic core is proposed to tackle the issue. The DC-DC converters including two inductances can be integrated into the proposed magnetic structure. Two windings of inductances are arranged as orthogonality in the magnetic structure, achieving magnetic decoupling. The inductances based on the magnetic structure are calculated and verified through magnetic circuit analysis and three-dimensional finite element analysis simulation. A GaN-based hardware prototype employing the proposed magnetic structure is built and tested to verify the performance.
AB - With the emerging technology of wide-band-gap power semiconductors and modern ferrite materials, the switching frequency of DC-DC converters based on gallium nitride devices (GaN) can be further pushed to megahertz range. The number of magnetic core is bottleneck of achieving both low cost and high power density. In this paper, a novel magnetic structure with a four-leg magnetic core is proposed to tackle the issue. The DC-DC converters including two inductances can be integrated into the proposed magnetic structure. Two windings of inductances are arranged as orthogonality in the magnetic structure, achieving magnetic decoupling. The inductances based on the magnetic structure are calculated and verified through magnetic circuit analysis and three-dimensional finite element analysis simulation. A GaN-based hardware prototype employing the proposed magnetic structure is built and tested to verify the performance.
KW - finite element analysis
KW - magnetic decoupling
KW - magnetic integration
UR - https://www.scopus.com/pages/publications/85102302083
U2 - 10.1109/WiPDAAsia49671.2020.9360293
DO - 10.1109/WiPDAAsia49671.2020.9360293
M3 - 会议稿件
AN - SCOPUS:85102302083
T3 - 2020 IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia, WiPDA Asia 2020
BT - 2020 IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia, WiPDA Asia 2020
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 2020 IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia, WiPDA Asia 2020
Y2 - 23 September 2020 through 25 September 2020
ER -