Low-temperature spin spray deposited ferrite/piezoelectric thin film magnetoelectric heterostructures with strong magnetoelectric coupling

Z. Zhou; O. Obi; T. X. Nan; S. Beguhn; J. Lou; X. Yang; Y. Gao; M. Li; S. Rand; H. Lin; N. X. Sun; G. Esteves; K. Nittala; J. L. Jones; K. Mahalingam; M. Liu; G. J. Brown

doi:10.1007/s10854-014-1707-7

Low-temperature spin spray deposited ferrite/piezoelectric thin film magnetoelectric heterostructures with strong magnetoelectric coupling

Z. Zhou
, O. Obi
, T. X. Nan
, S. Beguhn
, J. Lou
, X. Yang
, Y. Gao
, M. Li
, S. Rand
, H. Lin
, N. X. Sun
, G. Esteves
, K. Nittala
, J. L. Jones
, K. Mahalingam
, M. Liu
, G. J. Brown

Research output: Contribution to journal › Article › peer-review

17 Scopus citations

Abstract

We report low-temperature spin spray deposited Fe₃O ₄/ZnO thin film microwave magnetic/piezoelectric magnetoelectric heterostructures. A voltage induced effective ferromagnetic resonance field of 14 Oe was realized in Fe₃O₄/ZnO magnetoelectric (ME) heterostructures. Compared with most thin film magnetoelectric heterostructures prepared by high temperature (>600 C) deposition methods, for example, pulsed laser deposition, molecular beam epitaxy, or sputtering, Fe₃O ₄/ZnO ME heterostructures have much lower deposition temperature (<100 C) at a much lower cost and less energy dissipation, which can be readily integrated in different integrated circuits.

Original language	English
Pages (from-to)	1188-1192
Number of pages	5
Journal	Journal of Materials Science: Materials in Electronics
Volume	25
Issue number	3
DOIs	https://doi.org/10.1007/s10854-014-1707-7
State	Published - Mar 2014
Externally published	Yes

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Zhou, Z., Obi, O., Nan, T. X., Beguhn, S., Lou, J., Yang, X., Gao, Y., Li, M., Rand, S., Lin, H., Sun, N. X., Esteves, G., Nittala, K., Jones, J. L., Mahalingam, K., Liu, M., & Brown, G. J. (2014). Low-temperature spin spray deposited ferrite/piezoelectric thin film magnetoelectric heterostructures with strong magnetoelectric coupling. Journal of Materials Science: Materials in Electronics, 25(3), 1188-1192. https://doi.org/10.1007/s10854-014-1707-7

@article{908bfe2447094e9490dc44ee4305e1de,

title = "Low-temperature spin spray deposited ferrite/piezoelectric thin film magnetoelectric heterostructures with strong magnetoelectric coupling",

abstract = "We report low-temperature spin spray deposited Fe3O 4/ZnO thin film microwave magnetic/piezoelectric magnetoelectric heterostructures. A voltage induced effective ferromagnetic resonance field of 14 Oe was realized in Fe3O4/ZnO magnetoelectric (ME) heterostructures. Compared with most thin film magnetoelectric heterostructures prepared by high temperature (>600 C) deposition methods, for example, pulsed laser deposition, molecular beam epitaxy, or sputtering, Fe3O 4/ZnO ME heterostructures have much lower deposition temperature (<100 C) at a much lower cost and less energy dissipation, which can be readily integrated in different integrated circuits.",

author = "Z. Zhou and O. Obi and Nan, \{T. X.\} and S. Beguhn and J. Lou and X. Yang and Y. Gao and M. Li and S. Rand and H. Lin and Sun, \{N. X.\} and G. Esteves and K. Nittala and Jones, \{J. L.\} and K. Mahalingam and M. Liu and Brown, \{G. J.\}",

year = "2014",

month = mar,

doi = "10.1007/s10854-014-1707-7",

language = "英语",

volume = "25",

pages = "1188--1192",

journal = "Journal of Materials Science: Materials in Electronics",

issn = "0957-4522",

publisher = "Springer New York",

number = "3",

}

Zhou, Z, Obi, O, Nan, TX, Beguhn, S, Lou, J, Yang, X, Gao, Y, Li, M, Rand, S, Lin, H, Sun, NX, Esteves, G, Nittala, K, Jones, JL, Mahalingam, K, Liu, M & Brown, GJ 2014, 'Low-temperature spin spray deposited ferrite/piezoelectric thin film magnetoelectric heterostructures with strong magnetoelectric coupling', Journal of Materials Science: Materials in Electronics, vol. 25, no. 3, pp. 1188-1192. https://doi.org/10.1007/s10854-014-1707-7

TY - JOUR

T1 - Low-temperature spin spray deposited ferrite/piezoelectric thin film magnetoelectric heterostructures with strong magnetoelectric coupling

AU - Zhou, Z.

AU - Obi, O.

AU - Nan, T. X.

AU - Beguhn, S.

AU - Lou, J.

AU - Yang, X.

AU - Gao, Y.

AU - Li, M.

AU - Rand, S.

AU - Lin, H.

AU - Sun, N. X.

AU - Esteves, G.

AU - Nittala, K.

AU - Jones, J. L.

AU - Mahalingam, K.

AU - Liu, M.

AU - Brown, G. J.

PY - 2014/3

Y1 - 2014/3

N2 - We report low-temperature spin spray deposited Fe3O 4/ZnO thin film microwave magnetic/piezoelectric magnetoelectric heterostructures. A voltage induced effective ferromagnetic resonance field of 14 Oe was realized in Fe3O4/ZnO magnetoelectric (ME) heterostructures. Compared with most thin film magnetoelectric heterostructures prepared by high temperature (>600 C) deposition methods, for example, pulsed laser deposition, molecular beam epitaxy, or sputtering, Fe3O 4/ZnO ME heterostructures have much lower deposition temperature (<100 C) at a much lower cost and less energy dissipation, which can be readily integrated in different integrated circuits.

AB - We report low-temperature spin spray deposited Fe3O 4/ZnO thin film microwave magnetic/piezoelectric magnetoelectric heterostructures. A voltage induced effective ferromagnetic resonance field of 14 Oe was realized in Fe3O4/ZnO magnetoelectric (ME) heterostructures. Compared with most thin film magnetoelectric heterostructures prepared by high temperature (>600 C) deposition methods, for example, pulsed laser deposition, molecular beam epitaxy, or sputtering, Fe3O 4/ZnO ME heterostructures have much lower deposition temperature (<100 C) at a much lower cost and less energy dissipation, which can be readily integrated in different integrated circuits.

UR - https://www.scopus.com/pages/publications/84894672727

U2 - 10.1007/s10854-014-1707-7

DO - 10.1007/s10854-014-1707-7

M3 - 文章

AN - SCOPUS:84894672727

SN - 0957-4522

VL - 25

SP - 1188

EP - 1192

JO - Journal of Materials Science: Materials in Electronics

JF - Journal of Materials Science: Materials in Electronics

IS - 3

ER -

Low-temperature spin spray deposited ferrite/piezoelectric thin film magnetoelectric heterostructures with strong magnetoelectric coupling

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