Low temperature growth of (100)-oriented Ba(Zr0.2Ti0.8)O3-0.5(Ba0.7Ca0.3)TiO3 thin films using a LaNiO3 seed layer

Y. Chen; T. Y. Zhang; Q. G. Chi; J. Q. Lin; X. Wang; Q. Q. Lei

doi:10.1016/j.jallcom.2015.12.167

Low temperature growth of (100)-oriented Ba(Zr_0.2Ti_0.8)O₃-0.5(Ba_0.7Ca_0.3)TiO₃ thin films using a LaNiO₃ seed layer

Y. Chen
, T. Y. Zhang
, Q. G. Chi
, J. Q. Lin
, X. Wang
, Q. Q. Lei

Harbin University of Science and Technology
Xi'an Jiaotong University

Research output: Contribution to journal › Article › peer-review

17 Scopus citations

Abstract

Low-temperature growth of Ba(Zr_0.2Ti_0.8)O₃-0.5(Ba_0.7Ca_0.3)TiO₃ (BZT-0.5BCT) films, at temperatures as low as 550°C, was successfully achieved by a sol-gel route using a LaNiO₃ seed layer. The influence of the seed layer on the crystallization behavior and electric properties of the films was investigated in detail. It was found that low interfacial diffusion and high (100) orientation were simultaneously achieved by introducing a seed layer between films and substrates. Low leakage current density was obtained as a result of low-temperature crystallization and low interfacial diffusion, and the piezoelectric coefficient remained at a relatively high value because of the high orientation. This study showed that low-temperature crystallization suppresses interfacial diffusion and can extend film applications, for example, integrating them with silicon substrates.

Original language	English
Pages (from-to)	818-822
Number of pages	5
Journal	Journal of Alloys and Compounds
Volume	663
DOIs	https://doi.org/10.1016/j.jallcom.2015.12.167
State	Published - 5 Apr 2016
Externally published	Yes

Keywords

Interfacial diffusion
Orientation
Piezoelectric property
Seed layer

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10.1016/j.jallcom.2015.12.167

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@article{0c5a2b1edad24a1096592c4b16efb468,

title = "Low temperature growth of (100)-oriented Ba(Zr0.2Ti0.8)O3-0.5(Ba0.7Ca0.3)TiO3 thin films using a LaNiO3 seed layer",

abstract = "Low-temperature growth of Ba(Zr0.2Ti0.8)O3-0.5(Ba0.7Ca0.3)TiO3 (BZT-0.5BCT) films, at temperatures as low as 550°C, was successfully achieved by a sol-gel route using a LaNiO3 seed layer. The influence of the seed layer on the crystallization behavior and electric properties of the films was investigated in detail. It was found that low interfacial diffusion and high (100) orientation were simultaneously achieved by introducing a seed layer between films and substrates. Low leakage current density was obtained as a result of low-temperature crystallization and low interfacial diffusion, and the piezoelectric coefficient remained at a relatively high value because of the high orientation. This study showed that low-temperature crystallization suppresses interfacial diffusion and can extend film applications, for example, integrating them with silicon substrates.",

keywords = "Interfacial diffusion, Orientation, Piezoelectric property, Seed layer",

author = "Y. Chen and Zhang, \{T. Y.\} and Chi, \{Q. G.\} and Lin, \{J. Q.\} and X. Wang and Lei, \{Q. Q.\}",

year = "2016",

month = apr,

day = "5",

doi = "10.1016/j.jallcom.2015.12.167",

language = "英语",

volume = "663",

pages = "818--822",

journal = "Journal of Alloys and Compounds",

issn = "0925-8388",

publisher = "Elsevier B.V.",

}

TY - JOUR

T1 - Low temperature growth of (100)-oriented Ba(Zr0.2Ti0.8)O3-0.5(Ba0.7Ca0.3)TiO3 thin films using a LaNiO3 seed layer

AU - Chen, Y.

AU - Zhang, T. Y.

AU - Chi, Q. G.

AU - Lin, J. Q.

AU - Wang, X.

AU - Lei, Q. Q.

PY - 2016/4/5

Y1 - 2016/4/5

N2 - Low-temperature growth of Ba(Zr0.2Ti0.8)O3-0.5(Ba0.7Ca0.3)TiO3 (BZT-0.5BCT) films, at temperatures as low as 550°C, was successfully achieved by a sol-gel route using a LaNiO3 seed layer. The influence of the seed layer on the crystallization behavior and electric properties of the films was investigated in detail. It was found that low interfacial diffusion and high (100) orientation were simultaneously achieved by introducing a seed layer between films and substrates. Low leakage current density was obtained as a result of low-temperature crystallization and low interfacial diffusion, and the piezoelectric coefficient remained at a relatively high value because of the high orientation. This study showed that low-temperature crystallization suppresses interfacial diffusion and can extend film applications, for example, integrating them with silicon substrates.

AB - Low-temperature growth of Ba(Zr0.2Ti0.8)O3-0.5(Ba0.7Ca0.3)TiO3 (BZT-0.5BCT) films, at temperatures as low as 550°C, was successfully achieved by a sol-gel route using a LaNiO3 seed layer. The influence of the seed layer on the crystallization behavior and electric properties of the films was investigated in detail. It was found that low interfacial diffusion and high (100) orientation were simultaneously achieved by introducing a seed layer between films and substrates. Low leakage current density was obtained as a result of low-temperature crystallization and low interfacial diffusion, and the piezoelectric coefficient remained at a relatively high value because of the high orientation. This study showed that low-temperature crystallization suppresses interfacial diffusion and can extend film applications, for example, integrating them with silicon substrates.

KW - Interfacial diffusion

KW - Orientation

KW - Piezoelectric property

KW - Seed layer

UR - https://www.scopus.com/pages/publications/84952912030

U2 - 10.1016/j.jallcom.2015.12.167

DO - 10.1016/j.jallcom.2015.12.167

M3 - 文章

AN - SCOPUS:84952912030

SN - 0925-8388

VL - 663

SP - 818

EP - 822

JO - Journal of Alloys and Compounds

JF - Journal of Alloys and Compounds

ER -

Low temperature growth of (100)-oriented Ba(Zr_0.2Ti_0.8)O₃-0.5(Ba_0.7Ca_0.3)TiO₃ thin films using a LaNiO₃ seed layer

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Keywords

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