Low temperature firing of BiSbO4 microwave dielectric ceramic with B2O3-CuO addition

D. Zhou; Hong Wang; Li Xia Pang; Xi Yao; Xin Guang Wu

doi:10.1016/j.jeurceramsoc.2008.08.024

Low temperature firing of BiSbO₄ microwave dielectric ceramic with B₂O₃-CuO addition

D. Zhou
, Hong Wang
, Li Xia Pang
, Xi Yao
, Xin Guang Wu

Key Lab of the Ministry of Education for Process Control and Efficiency Egineering

Research output: Contribution to journal › Article › peer-review

28 Scopus citations

Abstract

The influence of B₂O₃-CuO addition on the sintering behavior, phase composition, microstructure and microwave dielectric properties of BiSbO₄ ceramic have been investigated. The BiSbO₄ ceramics can be well densified to approach above 95% theoretical density in the sintering temperature range from 840 to 960 °C as the addition amount of B₂O₃-CuO increases from 0.6 to 1.2 wt.%. Sintered ceramic samples were characterized by X-ray diffraction (XRD) and scanning electron microscopy (SEM). The microwave permittivity ε_r saturated at 19-20 and Qf values varied between 33,000 and 46,000 GHz while temperature coefficient of resonant frequency shifting between -70 and -60 ppm/°C at sintering temperature around 930 °C. Lowering sintering temperature of BiSbO₄ ceramics makes it possible for application in low temperature co-fired ceramic technology.

Original language	English
Pages (from-to)	1543-1546
Number of pages	4
Journal	Journal of the European Ceramic Society
Volume	29
Issue number	8
DOIs	https://doi.org/10.1016/j.jeurceramsoc.2008.08.024
State	Published - May 2009
Externally published	Yes

Keywords

BiSbO
Dielectric properties
Firing

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10.1016/j.jeurceramsoc.2008.08.024

Cite this

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title = "Low temperature firing of BiSbO4 microwave dielectric ceramic with B2O3-CuO addition",

abstract = "The influence of B2O3-CuO addition on the sintering behavior, phase composition, microstructure and microwave dielectric properties of BiSbO4 ceramic have been investigated. The BiSbO4 ceramics can be well densified to approach above 95\% theoretical density in the sintering temperature range from 840 to 960 °C as the addition amount of B2O3-CuO increases from 0.6 to 1.2 wt.\%. Sintered ceramic samples were characterized by X-ray diffraction (XRD) and scanning electron microscopy (SEM). The microwave permittivity εr saturated at 19-20 and Qf values varied between 33,000 and 46,000 GHz while temperature coefficient of resonant frequency shifting between -70 and -60 ppm/°C at sintering temperature around 930 °C. Lowering sintering temperature of BiSbO4 ceramics makes it possible for application in low temperature co-fired ceramic technology.",

keywords = "BiSbO, Dielectric properties, Firing",

author = "D. Zhou and Hong Wang and Pang, \{Li Xia\} and Xi Yao and Wu, \{Xin Guang\}",

year = "2009",

month = may,

doi = "10.1016/j.jeurceramsoc.2008.08.024",

language = "英语",

volume = "29",

pages = "1543--1546",

journal = "Journal of the European Ceramic Society",

issn = "0955-2219",

publisher = "Elsevier B.V.",

number = "8",

}

TY - JOUR

T1 - Low temperature firing of BiSbO4 microwave dielectric ceramic with B2O3-CuO addition

AU - Zhou, D.

AU - Wang, Hong

AU - Pang, Li Xia

AU - Yao, Xi

AU - Wu, Xin Guang

PY - 2009/5

Y1 - 2009/5

N2 - The influence of B2O3-CuO addition on the sintering behavior, phase composition, microstructure and microwave dielectric properties of BiSbO4 ceramic have been investigated. The BiSbO4 ceramics can be well densified to approach above 95% theoretical density in the sintering temperature range from 840 to 960 °C as the addition amount of B2O3-CuO increases from 0.6 to 1.2 wt.%. Sintered ceramic samples were characterized by X-ray diffraction (XRD) and scanning electron microscopy (SEM). The microwave permittivity εr saturated at 19-20 and Qf values varied between 33,000 and 46,000 GHz while temperature coefficient of resonant frequency shifting between -70 and -60 ppm/°C at sintering temperature around 930 °C. Lowering sintering temperature of BiSbO4 ceramics makes it possible for application in low temperature co-fired ceramic technology.

AB - The influence of B2O3-CuO addition on the sintering behavior, phase composition, microstructure and microwave dielectric properties of BiSbO4 ceramic have been investigated. The BiSbO4 ceramics can be well densified to approach above 95% theoretical density in the sintering temperature range from 840 to 960 °C as the addition amount of B2O3-CuO increases from 0.6 to 1.2 wt.%. Sintered ceramic samples were characterized by X-ray diffraction (XRD) and scanning electron microscopy (SEM). The microwave permittivity εr saturated at 19-20 and Qf values varied between 33,000 and 46,000 GHz while temperature coefficient of resonant frequency shifting between -70 and -60 ppm/°C at sintering temperature around 930 °C. Lowering sintering temperature of BiSbO4 ceramics makes it possible for application in low temperature co-fired ceramic technology.

KW - BiSbO

KW - Dielectric properties

KW - Firing

UR - https://www.scopus.com/pages/publications/62749094412

U2 - 10.1016/j.jeurceramsoc.2008.08.024

DO - 10.1016/j.jeurceramsoc.2008.08.024

M3 - 文章

AN - SCOPUS:62749094412

SN - 0955-2219

VL - 29

SP - 1543

EP - 1546

JO - Journal of the European Ceramic Society

JF - Journal of the European Ceramic Society

IS - 8

ER -

Low temperature firing of BiSbO₄ microwave dielectric ceramic with B₂O₃-CuO addition

Abstract

Keywords

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