TY - GEN
T1 - Low-stress TSVs for high-density 3D integration
AU - Qiao, Jingping
AU - Jiao, Binbin
AU - Jia, Shiqi
AU - Liu, Ruiwen
AU - Yun, Shichang
AU - Kong, Yanmei
AU - Ye, Yuxin
AU - Du, Xiangbin
AU - Yu, Lihang
AU - Lu, Dichen
AU - Liu, Ziyu
AU - Wang, Jie
N1 - Publisher Copyright:
© 2023 IEEE.
PY - 2023
Y1 - 2023
N2 - To address the issue of thermomechanical reliability caused by Through Silicon Via (TSV), this paper proposes a rugby-shaped hollow W-TSV. Simulations and experiments are carried out to study its performance. The simulation results show that the proposed TSV can relieve the thermal stress caused by TSV and has the characteristics of low stress. The maximum thermal stress induced by TSV on the substrate is only 176 MPa, and the thermal stress is reduced by 62.4% and 60.5% along the TSV axial and radial directions, respectively. An ultra-high-density (1600TSVs/mm2) TSV array with a size of 640× 512, a pitch of 25µm, and an aspect ratio of 20.4 was fabricated, and its electrical properties and thermomechanical reliability were tested. The maximum stress on the surface of the TSV array is 31.02 MPa, and the keep-out zone (KOZ) region is not required. The resistance change of TSV after the thermal cycling test is less than 2%. It is demonstrated that the proposed hollow W-TSV has good thermomechanical reliability and electrical properties and can be used for high-density three-dimensional integration.
AB - To address the issue of thermomechanical reliability caused by Through Silicon Via (TSV), this paper proposes a rugby-shaped hollow W-TSV. Simulations and experiments are carried out to study its performance. The simulation results show that the proposed TSV can relieve the thermal stress caused by TSV and has the characteristics of low stress. The maximum thermal stress induced by TSV on the substrate is only 176 MPa, and the thermal stress is reduced by 62.4% and 60.5% along the TSV axial and radial directions, respectively. An ultra-high-density (1600TSVs/mm2) TSV array with a size of 640× 512, a pitch of 25µm, and an aspect ratio of 20.4 was fabricated, and its electrical properties and thermomechanical reliability were tested. The maximum stress on the surface of the TSV array is 31.02 MPa, and the keep-out zone (KOZ) region is not required. The resistance change of TSV after the thermal cycling test is less than 2%. It is demonstrated that the proposed hollow W-TSV has good thermomechanical reliability and electrical properties and can be used for high-density three-dimensional integration.
KW - TSV
KW - Thermal stress
KW - Three-dimensional integrated
UR - https://www.scopus.com/pages/publications/85168308805
U2 - 10.1109/ECTC51909.2023.00107
DO - 10.1109/ECTC51909.2023.00107
M3 - 会议稿件
AN - SCOPUS:85168308805
T3 - Proceedings - Electronic Components and Technology Conference
SP - 606
EP - 611
BT - Proceedings - IEEE 73rd Electronic Components and Technology Conference, ECTC 2023
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 73rd IEEE Electronic Components and Technology Conference, ECTC 2023
Y2 - 30 May 2023 through 2 June 2023
ER -