TY - JOUR
T1 - Linear Anisotropic Magnetoresistive Sensor Without Barber-Pole Electrodes
AU - Su, Wei
AU - Wang, Zhiguang
AU - Wen, Tao
AU - Hu, Zhongqiang
AU - Wu, Jingen
AU - Zhou, Ziyao
AU - Liu, Ming
N1 - Publisher Copyright:
© 1980-2012 IEEE.
PY - 2019/6
Y1 - 2019/6
N2 - Traditional anisotropic magnetoresistive (AMR) sensors used barber-pole electrodes to rotate the current direction by 45° in order to obtain a linear electrical response. However, the adoption of barber-pole electrodes reduced the working area of the sensor. Moreover, the traditional AMR sensors need large-flipping stripes or permanent magnets for stabilization of the magnetization. Here, we report the AMR sensor using an antiferromagnetic layer to regulate the magnetization-current angle. The proposed sensor, without consuming extra area and power, could fully use the magnetoresistive area, and the stabilized magnetization could help in suppressing magnetic noise, enhancing stability, and improving linearity. The presented sensor has a stable response with a disturbing field of -1.5 T, while the commercial sensors need to be reset after being exposed to a small disturbing field of 5 Oe.
AB - Traditional anisotropic magnetoresistive (AMR) sensors used barber-pole electrodes to rotate the current direction by 45° in order to obtain a linear electrical response. However, the adoption of barber-pole electrodes reduced the working area of the sensor. Moreover, the traditional AMR sensors need large-flipping stripes or permanent magnets for stabilization of the magnetization. Here, we report the AMR sensor using an antiferromagnetic layer to regulate the magnetization-current angle. The proposed sensor, without consuming extra area and power, could fully use the magnetoresistive area, and the stabilized magnetization could help in suppressing magnetic noise, enhancing stability, and improving linearity. The presented sensor has a stable response with a disturbing field of -1.5 T, while the commercial sensors need to be reset after being exposed to a small disturbing field of 5 Oe.
KW - Anisotropic magnetoresistance
KW - antiferromagnetic
KW - exchange bias
KW - magnetic sensor
UR - https://www.scopus.com/pages/publications/85066448726
U2 - 10.1109/LED.2019.2913506
DO - 10.1109/LED.2019.2913506
M3 - 文章
AN - SCOPUS:85066448726
SN - 0741-3106
VL - 40
SP - 969
EP - 972
JO - IEEE Electron Device Letters
JF - IEEE Electron Device Letters
IS - 6
M1 - 8701473
ER -