Light regulated I–V hysteresis loop of Ag/BiFeO ₃ /FTO thin film

A hysteresis loop of current–voltage characteristics based multiferroic BiFeO ₃ nanoribbons memory device is observed. Moreover, the white-light can greatly regulate both the current–voltage hysteresis loop and the ferroelectric hysteresis loop. The stored space charges within the electrodes/BiFeO ₃ interface can lead to hysteresis-type I–V characteristics of Ag/BiFeO ₃ /FTO devices. The white-light controlled I–V loop and ferroelectric loop result from photon-generated carries. Since the I–V hysteresis loop and ferroelectric hysteresis loop have a potential application prospect to the memory devices, these two white-light controlled the hysteresis loops curves are likely to provide promising opportunity for developing the multi-functional memory devices.