Light-modulated resistive switching memory behavior in ZnO/BaTiO3/ZnO multilayer

Lujun Wei; Bai Sun; Wenxi Zhao; Hongwei Li; Xiangjiang Jia; Jianhong Wu; Peng Chen

doi:10.1142/S0217984916501414

Light-modulated resistive switching memory behavior in ZnO/BaTiO₃/ZnO multilayer

Lujun Wei
, Bai Sun
, Wenxi Zhao
, Hongwei Li
, Xiangjiang Jia
, Jianhong Wu
, Peng Chen

Southwest University

Research output: Contribution to journal › Article › peer-review

3 Scopus citations

Abstract

Nanoscale structure ZnO/BaTiO₃/ZnO multilayer was fabricated on silicon (Si) substrate by RF magnetron sputtering system. The light-modulated resistive switching characteristics in ZnO/BaTiO₃/ZnO devices were observed. The light-modulated resistive switching shows good repeatability at room temperature.

Original language	English
Article number	1650141
Journal	Modern Physics Letters B
Volume	30
Issue number	14
DOIs	https://doi.org/10.1142/S0217984916501414
State	Published - 30 May 2016
Externally published	Yes

Keywords

Resistive switching
Schottky barrier
ZnO/BaTiO/ZnO
light modulation

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10.1142/S0217984916501414

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title = "Light-modulated resistive switching memory behavior in ZnO/BaTiO3/ZnO multilayer",

abstract = "Nanoscale structure ZnO/BaTiO3/ZnO multilayer was fabricated on silicon (Si) substrate by RF magnetron sputtering system. The light-modulated resistive switching characteristics in ZnO/BaTiO3/ZnO devices were observed. The light-modulated resistive switching shows good repeatability at room temperature.",

keywords = "Resistive switching, Schottky barrier, ZnO/BaTiO/ZnO, light modulation",

author = "Lujun Wei and Bai Sun and Wenxi Zhao and Hongwei Li and Xiangjiang Jia and Jianhong Wu and Peng Chen",

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T1 - Light-modulated resistive switching memory behavior in ZnO/BaTiO3/ZnO multilayer

AU - Wei, Lujun

AU - Sun, Bai

AU - Zhao, Wenxi

AU - Li, Hongwei

AU - Jia, Xiangjiang

AU - Wu, Jianhong

AU - Chen, Peng

PY - 2016/5/30

Y1 - 2016/5/30

N2 - Nanoscale structure ZnO/BaTiO3/ZnO multilayer was fabricated on silicon (Si) substrate by RF magnetron sputtering system. The light-modulated resistive switching characteristics in ZnO/BaTiO3/ZnO devices were observed. The light-modulated resistive switching shows good repeatability at room temperature.

AB - Nanoscale structure ZnO/BaTiO3/ZnO multilayer was fabricated on silicon (Si) substrate by RF magnetron sputtering system. The light-modulated resistive switching characteristics in ZnO/BaTiO3/ZnO devices were observed. The light-modulated resistive switching shows good repeatability at room temperature.

KW - Resistive switching

KW - Schottky barrier

KW - ZnO/BaTiO/ZnO

KW - light modulation

UR - https://www.scopus.com/pages/publications/84969921672

U2 - 10.1142/S0217984916501414

DO - 10.1142/S0217984916501414

M3 - 文章

AN - SCOPUS:84969921672

SN - 0217-9849

VL - 30

JO - Modern Physics Letters B

JF - Modern Physics Letters B

IS - 14

M1 - 1650141

ER -

Light-modulated resistive switching memory behavior in ZnO/BaTiO₃/ZnO multilayer

Abstract

Keywords

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