Light enhanced resistive switching in BaTiO3/CoFeB/BaTiO3 structure

Hongwei Li; Bai Sun; Lujun Wei; Jianhong Wu; Xiangjiang Jia; Wenxi Zhao; Peng Chen

doi:10.1142/S1793604716500521

Light enhanced resistive switching in BaTiO₃/CoFeB/BaTiO₃ structure

Hongwei Li
, Bai Sun
, Lujun Wei
, Jianhong Wu
, Xiangjiang Jia
, Wenxi Zhao
, Peng Chen

Southwest University

Research output: Contribution to journal › Article › peer-review

6 Scopus citations

Abstract

Obvious resistive switching is observed under light irradiation in BaTiO₃/CoFeB/BaTiO₃ trilayer prepared by magnetron sputtering system while the same sample shows extremely small resistive switching effect in the dark. Under the irradiation of 31.4mW/cm², the ratio of high resistance to low resistance (OFF/ON ratio) of the sample annealed at 600°C can keep about 80 in more than 70 test cycles without obvious decay. The current conduction mechanism is PF emission in LRS and space charge limited conduction (SCLC) in HRS. The origin of the resistive switching behavior can be explained by considering the trapping and detrapping of charges.

Original language	English
Article number	1650052
Journal	Functional Materials Letters
Volume	9
Issue number	5
DOIs	https://doi.org/10.1142/S1793604716500521
State	Published - 1 Oct 2016
Externally published	Yes

Keywords

Resistive switching
light irradiation
magnetron sputtering system
memory device
multilayer film

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10.1142/S1793604716500521

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title = "Light enhanced resistive switching in BaTiO3/CoFeB/BaTiO3 structure",

abstract = "Obvious resistive switching is observed under light irradiation in BaTiO3/CoFeB/BaTiO3 trilayer prepared by magnetron sputtering system while the same sample shows extremely small resistive switching effect in the dark. Under the irradiation of 31.4mW/cm2, the ratio of high resistance to low resistance (OFF/ON ratio) of the sample annealed at 600°C can keep about 80 in more than 70 test cycles without obvious decay. The current conduction mechanism is PF emission in LRS and space charge limited conduction (SCLC) in HRS. The origin of the resistive switching behavior can be explained by considering the trapping and detrapping of charges.",

keywords = "Resistive switching, light irradiation, magnetron sputtering system, memory device, multilayer film",

author = "Hongwei Li and Bai Sun and Lujun Wei and Jianhong Wu and Xiangjiang Jia and Wenxi Zhao and Peng Chen",

note = "Publisher Copyright: {\textcopyright} 2016 World Scientific Publishing Company.",

year = "2016",

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doi = "10.1142/S1793604716500521",

language = "英语",

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TY - JOUR

T1 - Light enhanced resistive switching in BaTiO3/CoFeB/BaTiO3 structure

AU - Li, Hongwei

AU - Sun, Bai

AU - Wei, Lujun

AU - Wu, Jianhong

AU - Jia, Xiangjiang

AU - Zhao, Wenxi

AU - Chen, Peng

PY - 2016/10/1

Y1 - 2016/10/1

N2 - Obvious resistive switching is observed under light irradiation in BaTiO3/CoFeB/BaTiO3 trilayer prepared by magnetron sputtering system while the same sample shows extremely small resistive switching effect in the dark. Under the irradiation of 31.4mW/cm2, the ratio of high resistance to low resistance (OFF/ON ratio) of the sample annealed at 600°C can keep about 80 in more than 70 test cycles without obvious decay. The current conduction mechanism is PF emission in LRS and space charge limited conduction (SCLC) in HRS. The origin of the resistive switching behavior can be explained by considering the trapping and detrapping of charges.

AB - Obvious resistive switching is observed under light irradiation in BaTiO3/CoFeB/BaTiO3 trilayer prepared by magnetron sputtering system while the same sample shows extremely small resistive switching effect in the dark. Under the irradiation of 31.4mW/cm2, the ratio of high resistance to low resistance (OFF/ON ratio) of the sample annealed at 600°C can keep about 80 in more than 70 test cycles without obvious decay. The current conduction mechanism is PF emission in LRS and space charge limited conduction (SCLC) in HRS. The origin of the resistive switching behavior can be explained by considering the trapping and detrapping of charges.

KW - Resistive switching

KW - light irradiation

KW - magnetron sputtering system

KW - memory device

KW - multilayer film

UR - https://www.scopus.com/pages/publications/84976328446

U2 - 10.1142/S1793604716500521

DO - 10.1142/S1793604716500521

M3 - 文章

AN - SCOPUS:84976328446

SN - 1793-6047

VL - 9

JO - Functional Materials Letters

JF - Functional Materials Letters

IS - 5

M1 - 1650052

ER -

Light enhanced resistive switching in BaTiO₃/CoFeB/BaTiO₃ structure

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Keywords

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