Light-Controlled Simultaneous Resistive and Ferroelectricity Switching Effects of BiFeO3 Film for a Flexible Multistate High-Storage Memory Device

Bai Sun; Mei Tang; Ju Gao; Chang Ming Li

doi:10.1002/celc.201600002

Light-Controlled Simultaneous Resistive and Ferroelectricity Switching Effects of BiFeO₃ Film for a Flexible Multistate High-Storage Memory Device

Bai Sun
, Mei Tang
, Ju Gao
, Chang Ming Li

Southwest University
Suzhou University of Science and Technology

Research output: Contribution to journal › Article › peer-review

37 Scopus citations

Abstract

A flexible memory device with an ITO/BiFeO₃/Ti/Polyimide structure is prepared for light-controlled simultaneous resistive and ferroelectricity switching effects, achieving a multistate high-storage memory capacity. The mechanism for superior storage performance is discussed in detail. This work holds a great promise for a flexible and wearable light-controlled non-volatile multistate memory device with a high capacity and low cost.

Original language	English
Pages (from-to)	896-901
Number of pages	6
Journal	ChemElectroChem
Volume	3
Issue number	6
DOIs	https://doi.org/10.1002/celc.201600002
State	Published - 1 Jun 2016
Externally published	Yes

Keywords

ferroelectric memory
flexible and wearable
light-controlled
multistate memory
resistive switching

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10.1002/celc.201600002

Cite this

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title = "Light-Controlled Simultaneous Resistive and Ferroelectricity Switching Effects of BiFeO3 Film for a Flexible Multistate High-Storage Memory Device",

abstract = "A flexible memory device with an ITO/BiFeO3/Ti/Polyimide structure is prepared for light-controlled simultaneous resistive and ferroelectricity switching effects, achieving a multistate high-storage memory capacity. The mechanism for superior storage performance is discussed in detail. This work holds a great promise for a flexible and wearable light-controlled non-volatile multistate memory device with a high capacity and low cost.",

keywords = "ferroelectric memory, flexible and wearable, light-controlled, multistate memory, resistive switching",

author = "Bai Sun and Mei Tang and Ju Gao and Li, \{Chang Ming\}",

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year = "2016",

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doi = "10.1002/celc.201600002",

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AU - Sun, Bai

AU - Tang, Mei

AU - Gao, Ju

AU - Li, Chang Ming

PY - 2016/6/1

Y1 - 2016/6/1

N2 - A flexible memory device with an ITO/BiFeO3/Ti/Polyimide structure is prepared for light-controlled simultaneous resistive and ferroelectricity switching effects, achieving a multistate high-storage memory capacity. The mechanism for superior storage performance is discussed in detail. This work holds a great promise for a flexible and wearable light-controlled non-volatile multistate memory device with a high capacity and low cost.

AB - A flexible memory device with an ITO/BiFeO3/Ti/Polyimide structure is prepared for light-controlled simultaneous resistive and ferroelectricity switching effects, achieving a multistate high-storage memory capacity. The mechanism for superior storage performance is discussed in detail. This work holds a great promise for a flexible and wearable light-controlled non-volatile multistate memory device with a high capacity and low cost.

KW - ferroelectric memory

KW - flexible and wearable

KW - light-controlled

KW - multistate memory

KW - resistive switching

UR - https://www.scopus.com/pages/publications/84978001480

U2 - 10.1002/celc.201600002

DO - 10.1002/celc.201600002

M3 - 文章

AN - SCOPUS:84978001480

SN - 2196-0216

VL - 3

SP - 896

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JO - ChemElectroChem

JF - ChemElectroChem

IS - 6

ER -

Light-Controlled Simultaneous Resistive and Ferroelectricity Switching Effects of BiFeO₃ Film for a Flexible Multistate High-Storage Memory Device

Abstract

Keywords

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