LiF/AlO as Dielectrics for MOSFET on Single Crystal Hydrogen-Terminated Diamond

Yan Feng Wang; Wei Wang; Haris Naeem Abbasi; Xiaohui Chang; Xiaofan Zhang; Tianfei Zhu; Zhangcheng Liu; Wangzhen Song; Genqiang Chen; Hong Xing Wang

doi:10.1109/LED.2020.2990118

LiF/AlO as Dielectrics for MOSFET on Single Crystal Hydrogen-Terminated Diamond

Yan Feng Wang
, Wei Wang
, Haris Naeem Abbasi
, Xiaohui Chang
, Xiaofan Zhang
, Tianfei Zhu
, Zhangcheng Liu
, Wangzhen Song
, Genqiang Chen
, Hong Xing Wang

Faculty of Electronic and Information Engineering

Xi'an Jiaotong University

Research output: Contribution to journal › Article › peer-review

28 Scopus citations

Abstract

Fabrication of single crystal hydrogen-terminated diamond MOSFET with dielectrics of LiF/Al₂O₃ has been successfully carried out. After patterning source and drain electrodes, 60nm LiF/ 20nm Al₂O₃ were deposited as dielectrics. The output and transfer characteristics were investigated, indicating the typical p-type channel MOSFET. The on/off ratio was ∼ 10⁹ , which was high enough for practical applications. The fixed and trapped charge in LiF/Al₂O₃ were also examined. Based on the capacitance-voltage curves, the dielectric constant of LiF/Al₂O₃ was calculated to be 36.1, which was ascribed to the LiF supercapacitor structure. To the best of our knowledge, this LiF supercapacitor structure was first used in hydrogen-terminated diamond MOSFET to improve the dielectric constant.

Original language	English
Article number	9076687
Pages (from-to)	808-811
Number of pages	4
Journal	IEEE Electron Device Letters
Volume	41
Issue number	6
DOIs	https://doi.org/10.1109/LED.2020.2990118
State	Published - 1 Jun 2020

Keywords

Diamond
LiF/Al₂O₃
MOSFET
supercapacitor

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10.1109/LED.2020.2990118

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@article{281208966fbe4b4796c8f1120c6caa3f,

title = "LiF/AlO as Dielectrics for MOSFET on Single Crystal Hydrogen-Terminated Diamond",

abstract = "Fabrication of single crystal hydrogen-terminated diamond MOSFET with dielectrics of LiF/Al2O3 has been successfully carried out. After patterning source and drain electrodes, 60nm LiF/ 20nm Al2O3 were deposited as dielectrics. The output and transfer characteristics were investigated, indicating the typical p-type channel MOSFET. The on/off ratio was ∼ 109 , which was high enough for practical applications. The fixed and trapped charge in LiF/Al2O3 were also examined. Based on the capacitance-voltage curves, the dielectric constant of LiF/Al2O3 was calculated to be 36.1, which was ascribed to the LiF supercapacitor structure. To the best of our knowledge, this LiF supercapacitor structure was first used in hydrogen-terminated diamond MOSFET to improve the dielectric constant.",

keywords = "Diamond, LiF/Al₂O₃, MOSFET, supercapacitor",

author = "Wang, \{Yan Feng\} and Wei Wang and Abbasi, \{Haris Naeem\} and Xiaohui Chang and Xiaofan Zhang and Tianfei Zhu and Zhangcheng Liu and Wangzhen Song and Genqiang Chen and Wang, \{Hong Xing\}",

note = "Publisher Copyright: {\textcopyright} 1980-2012 IEEE.",

year = "2020",

month = jun,

day = "1",

doi = "10.1109/LED.2020.2990118",

language = "英语",

volume = "41",

pages = "808--811",

journal = "IEEE Electron Device Letters",

issn = "0741-3106",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

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TY - JOUR

T1 - LiF/AlO as Dielectrics for MOSFET on Single Crystal Hydrogen-Terminated Diamond

AU - Wang, Yan Feng

AU - Wang, Wei

AU - Abbasi, Haris Naeem

AU - Chang, Xiaohui

AU - Zhang, Xiaofan

AU - Zhu, Tianfei

AU - Liu, Zhangcheng

AU - Song, Wangzhen

AU - Chen, Genqiang

AU - Wang, Hong Xing

PY - 2020/6/1

Y1 - 2020/6/1

N2 - Fabrication of single crystal hydrogen-terminated diamond MOSFET with dielectrics of LiF/Al2O3 has been successfully carried out. After patterning source and drain electrodes, 60nm LiF/ 20nm Al2O3 were deposited as dielectrics. The output and transfer characteristics were investigated, indicating the typical p-type channel MOSFET. The on/off ratio was ∼ 109 , which was high enough for practical applications. The fixed and trapped charge in LiF/Al2O3 were also examined. Based on the capacitance-voltage curves, the dielectric constant of LiF/Al2O3 was calculated to be 36.1, which was ascribed to the LiF supercapacitor structure. To the best of our knowledge, this LiF supercapacitor structure was first used in hydrogen-terminated diamond MOSFET to improve the dielectric constant.

AB - Fabrication of single crystal hydrogen-terminated diamond MOSFET with dielectrics of LiF/Al2O3 has been successfully carried out. After patterning source and drain electrodes, 60nm LiF/ 20nm Al2O3 were deposited as dielectrics. The output and transfer characteristics were investigated, indicating the typical p-type channel MOSFET. The on/off ratio was ∼ 109 , which was high enough for practical applications. The fixed and trapped charge in LiF/Al2O3 were also examined. Based on the capacitance-voltage curves, the dielectric constant of LiF/Al2O3 was calculated to be 36.1, which was ascribed to the LiF supercapacitor structure. To the best of our knowledge, this LiF supercapacitor structure was first used in hydrogen-terminated diamond MOSFET to improve the dielectric constant.

KW - Diamond

KW - LiF/Al₂O₃

KW - MOSFET

KW - supercapacitor

UR - https://www.scopus.com/pages/publications/85085576562

U2 - 10.1109/LED.2020.2990118

DO - 10.1109/LED.2020.2990118

M3 - 文章

AN - SCOPUS:85085576562

SN - 0741-3106

VL - 41

SP - 808

EP - 811

JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

IS - 6

M1 - 9076687

ER -

LiF/AlO as Dielectrics for MOSFET on Single Crystal Hydrogen-Terminated Diamond

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Keywords

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