Lattice-matched epitaxial ternary PrxY2-xO 3 films on SrO-passivated Si (001): Interface engineering and crystallography tailoring

G. Niu; P. Zaumseil; M. A. Schubert; M. H. Zoellner; J. Dabrowski; T. Schroeder

doi:10.1063/1.4772939

Lattice-matched epitaxial ternary Pr_xY_2-xO ₃ films on SrO-passivated Si (001): Interface engineering and crystallography tailoring

G. Niu
, P. Zaumseil
, M. A. Schubert
, M. H. Zoellner
, J. Dabrowski
, T. Schroeder

Research output: Contribution to journal › Article › peer-review

6 Scopus citations

Abstract

Rare earth bixbyite oxides (Re₂O₃) crystallize on Si (001) in 110-orientation due to either lattice mismatch or oxide/Si interface conditions. In this letter, a 1/2 monolayer (ML) SrO layer was employed as an interface engineering approach to achieve epitaxial ternary oxide Pr _xY_2-xO₃ (x = 0-2) films on Si (001) with a sharp oxide/Si (001) interface. The passivation layer is stable up to 780 °C. A fully lattice-matched Pr_0.9Y_1.1O₃ film was obtained, which still has 110-orientation on Si (001). This allows us to clarify the decisive impact of the interface conditions-rather than lattice mismatch-on the growth orientation of Re₂O₃ films on Si (001).

Original language	English
Article number	011906
Journal	Applied Physics Letters
Volume	102
Issue number	1
DOIs	https://doi.org/10.1063/1.4772939
State	Published - 7 Jan 2013
Externally published	Yes

Access to Document

10.1063/1.4772939

Cite this

@article{c809044416b943ee9fc433b6bb323eaf,

title = "Lattice-matched epitaxial ternary PrxY2-xO 3 films on SrO-passivated Si (001): Interface engineering and crystallography tailoring",

abstract = "Rare earth bixbyite oxides (Re2O3) crystallize on Si (001) in 110-orientation due to either lattice mismatch or oxide/Si interface conditions. In this letter, a 1/2 monolayer (ML) SrO layer was employed as an interface engineering approach to achieve epitaxial ternary oxide Pr xY2-xO3 (x = 0-2) films on Si (001) with a sharp oxide/Si (001) interface. The passivation layer is stable up to 780 °C. A fully lattice-matched Pr0.9Y1.1O3 film was obtained, which still has 110-orientation on Si (001). This allows us to clarify the decisive impact of the interface conditions-rather than lattice mismatch-on the growth orientation of Re2O3 films on Si (001).",

author = "G. Niu and P. Zaumseil and Schubert, \{M. A.\} and Zoellner, \{M. H.\} and J. Dabrowski and T. Schroeder",

year = "2013",

month = jan,

day = "7",

doi = "10.1063/1.4772939",

language = "英语",

volume = "102",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "1",

}

TY - JOUR

T1 - Lattice-matched epitaxial ternary PrxY2-xO 3 films on SrO-passivated Si (001)

T2 - Interface engineering and crystallography tailoring

AU - Niu, G.

AU - Zaumseil, P.

AU - Schubert, M. A.

AU - Zoellner, M. H.

AU - Dabrowski, J.

AU - Schroeder, T.

PY - 2013/1/7

Y1 - 2013/1/7

N2 - Rare earth bixbyite oxides (Re2O3) crystallize on Si (001) in 110-orientation due to either lattice mismatch or oxide/Si interface conditions. In this letter, a 1/2 monolayer (ML) SrO layer was employed as an interface engineering approach to achieve epitaxial ternary oxide Pr xY2-xO3 (x = 0-2) films on Si (001) with a sharp oxide/Si (001) interface. The passivation layer is stable up to 780 °C. A fully lattice-matched Pr0.9Y1.1O3 film was obtained, which still has 110-orientation on Si (001). This allows us to clarify the decisive impact of the interface conditions-rather than lattice mismatch-on the growth orientation of Re2O3 films on Si (001).

AB - Rare earth bixbyite oxides (Re2O3) crystallize on Si (001) in 110-orientation due to either lattice mismatch or oxide/Si interface conditions. In this letter, a 1/2 monolayer (ML) SrO layer was employed as an interface engineering approach to achieve epitaxial ternary oxide Pr xY2-xO3 (x = 0-2) films on Si (001) with a sharp oxide/Si (001) interface. The passivation layer is stable up to 780 °C. A fully lattice-matched Pr0.9Y1.1O3 film was obtained, which still has 110-orientation on Si (001). This allows us to clarify the decisive impact of the interface conditions-rather than lattice mismatch-on the growth orientation of Re2O3 films on Si (001).

UR - https://www.scopus.com/pages/publications/84872305714

U2 - 10.1063/1.4772939

DO - 10.1063/1.4772939

M3 - 文章

AN - SCOPUS:84872305714

SN - 0003-6951

VL - 102

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 1

M1 - 011906

ER -

Lattice-matched epitaxial ternary Pr_xY_2-xO ₃ films on SrO-passivated Si (001): Interface engineering and crystallography tailoring

Abstract

Access to Document

Other files and links

Fingerprint

Cite this