Lattice distortion and room-temperature ferroelectric properties of (Sm, Cr) co-doped BiFeO3 thin films

Wenlong Liu; Guoqiang Tan; Guohua Dong; Huijun Ren

doi:10.1007/s10854-013-1400-2

Lattice distortion and room-temperature ferroelectric properties of (Sm, Cr) co-doped BiFeO₃ thin films

Wenlong Liu
, Guoqiang Tan
, Guohua Dong
, Huijun Ren

Shaanxi University of Science and Technology

Research output: Contribution to journal › Article › peer-review

9 Scopus citations

Abstract

Pure BiFeO₃ (BFO) and Bi_0.85Sm_0.15Fe _0.97Cr_0.03O₃ (BSFCO) thin films were prepared on FTO/glass (SnO₂: F) substrates by using a chemical solution deposition method. The effects of (Sm, Cr) co-doping on the microstructure and ferroelectric properties of the BSFCO thin films were studied. The X-ray diffraction and Raman scattering spectra proved that the co-doped BSFCO thin film has a lattice distortion compared with the pure BFO thin film. The remnant polarization (2P _r) of the BSFCO thin film was 153.67 μC/cm ² at 1 kHz in the applied electric field of 1,270 kV/cm. At an applied electric field of 100 kV/cm, the leakage current density of the co-doped BSFCO thin film (2.12 × 10^-6 A/cm²) was 3 orders lower than that of the pure BFO thin film (3.8 × 10^-3 A/cm ²). The improved properties of the co-doped thin film could be attributed to lattices distortion, more grain boundaries, higher binding energy of Sm-O and the mixed-valence states of Cr³⁺ and Cr ⁶⁺.

Original language	English
Pages (from-to)	4296-4301
Number of pages	6
Journal	Journal of Materials Science: Materials in Electronics
Volume	24
Issue number	11
DOIs	https://doi.org/10.1007/s10854-013-1400-2
State	Published - Nov 2013
Externally published	Yes

Access to Document

10.1007/s10854-013-1400-2

Cite this

@article{9fa47849c096439fa708ab4b3ef5c50a,

title = "Lattice distortion and room-temperature ferroelectric properties of (Sm, Cr) co-doped BiFeO3 thin films",

abstract = "Pure BiFeO3 (BFO) and Bi0.85Sm0.15Fe 0.97Cr0.03O3 (BSFCO) thin films were prepared on FTO/glass (SnO2: F) substrates by using a chemical solution deposition method. The effects of (Sm, Cr) co-doping on the microstructure and ferroelectric properties of the BSFCO thin films were studied. The X-ray diffraction and Raman scattering spectra proved that the co-doped BSFCO thin film has a lattice distortion compared with the pure BFO thin film. The remnant polarization (2P r) of the BSFCO thin film was 153.67 μC/cm 2 at 1 kHz in the applied electric field of 1,270 kV/cm. At an applied electric field of 100 kV/cm, the leakage current density of the co-doped BSFCO thin film (2.12 × 10-6 A/cm2) was 3 orders lower than that of the pure BFO thin film (3.8 × 10-3 A/cm 2). The improved properties of the co-doped thin film could be attributed to lattices distortion, more grain boundaries, higher binding energy of Sm-O and the mixed-valence states of Cr3+ and Cr 6+.",

author = "Wenlong Liu and Guoqiang Tan and Guohua Dong and Huijun Ren",

year = "2013",

month = nov,

doi = "10.1007/s10854-013-1400-2",

language = "英语",

volume = "24",

pages = "4296--4301",

journal = "Journal of Materials Science: Materials in Electronics",

issn = "0957-4522",

publisher = "Springer New York",

number = "11",

}

TY - JOUR

T1 - Lattice distortion and room-temperature ferroelectric properties of (Sm, Cr) co-doped BiFeO3 thin films

AU - Liu, Wenlong

AU - Tan, Guoqiang

AU - Dong, Guohua

AU - Ren, Huijun

PY - 2013/11

Y1 - 2013/11

N2 - Pure BiFeO3 (BFO) and Bi0.85Sm0.15Fe 0.97Cr0.03O3 (BSFCO) thin films were prepared on FTO/glass (SnO2: F) substrates by using a chemical solution deposition method. The effects of (Sm, Cr) co-doping on the microstructure and ferroelectric properties of the BSFCO thin films were studied. The X-ray diffraction and Raman scattering spectra proved that the co-doped BSFCO thin film has a lattice distortion compared with the pure BFO thin film. The remnant polarization (2P r) of the BSFCO thin film was 153.67 μC/cm 2 at 1 kHz in the applied electric field of 1,270 kV/cm. At an applied electric field of 100 kV/cm, the leakage current density of the co-doped BSFCO thin film (2.12 × 10-6 A/cm2) was 3 orders lower than that of the pure BFO thin film (3.8 × 10-3 A/cm 2). The improved properties of the co-doped thin film could be attributed to lattices distortion, more grain boundaries, higher binding energy of Sm-O and the mixed-valence states of Cr3+ and Cr 6+.

AB - Pure BiFeO3 (BFO) and Bi0.85Sm0.15Fe 0.97Cr0.03O3 (BSFCO) thin films were prepared on FTO/glass (SnO2: F) substrates by using a chemical solution deposition method. The effects of (Sm, Cr) co-doping on the microstructure and ferroelectric properties of the BSFCO thin films were studied. The X-ray diffraction and Raman scattering spectra proved that the co-doped BSFCO thin film has a lattice distortion compared with the pure BFO thin film. The remnant polarization (2P r) of the BSFCO thin film was 153.67 μC/cm 2 at 1 kHz in the applied electric field of 1,270 kV/cm. At an applied electric field of 100 kV/cm, the leakage current density of the co-doped BSFCO thin film (2.12 × 10-6 A/cm2) was 3 orders lower than that of the pure BFO thin film (3.8 × 10-3 A/cm 2). The improved properties of the co-doped thin film could be attributed to lattices distortion, more grain boundaries, higher binding energy of Sm-O and the mixed-valence states of Cr3+ and Cr 6+.

UR - https://www.scopus.com/pages/publications/84887065292

U2 - 10.1007/s10854-013-1400-2

DO - 10.1007/s10854-013-1400-2

M3 - 文章

AN - SCOPUS:84887065292

SN - 0957-4522

VL - 24

SP - 4296

EP - 4301

JO - Journal of Materials Science: Materials in Electronics

JF - Journal of Materials Science: Materials in Electronics

IS - 11

ER -

Lattice distortion and room-temperature ferroelectric properties of (Sm, Cr) co-doped BiFeO₃ thin films

Abstract

Access to Document

Other files and links

Fingerprint

Cite this