Abstract
Epitaxial lateral overgrowth (ELO) of diamond films on patterned Ir/(0 0 1)HPHT-diamond substrates have been carried out by microwave plasma CVD system. Ir/(0 0 1)HPHT-diamond substrates are fabricated by photolithographic and magnetron sputtering technique. The morphology of the as grown ELO diamond film is characterized by optical microscopy and scanning electronic microscopy. The quality and stress of the ELO diamond film are investigated by surface etching pit density and micro-Raman spectroscopy. Two ultraviolet photodetectors are fabricated on ELO diamond area and non-ELO diamond area prepared on same substrate, and that one on ELO diamond area indicates better photoelectric properties. All results indicate quality of ELO diamond film is improved.
| Original language | English |
|---|---|
| Pages (from-to) | 51-56 |
| Number of pages | 6 |
| Journal | Journal of Crystal Growth |
| Volume | 489 |
| DOIs | |
| State | Published - 1 May 2018 |
Keywords
- Diamond
- Dislocations
- Etching pit
- Iridium
- Lateral overgrowth
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