Laser micro-structuring of sapphire wafer and fiber

Yutang Dai; Gang Xu; Jianlei Cui; Fan Bai

doi:10.1117/12.841098

Laser micro-structuring of sapphire wafer and fiber

Yutang Dai
, Gang Xu
, Jianlei Cui
, Fan Bai

Wuhan University of Technology

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

7 Scopus citations

Abstract

Currently, sapphire is widely used in the field of optoelectronic devices and micro-mechanical components. One of the problems in using sapphire is the difficulty in cutting and micro-structuring due to the hardness of sapphire itself. In this paper, laser micromachining characteristics of sapphire are investigated using 157nm DUV laser micro-ablation system. Under laser fluence of 3-4 J/cm2, the maximum ablation rate could reach to 400nm/s. For 3D laser ablation, it is necessary to select a proper combination of process parameters. Several 3D micro-structures are produced in sapphire wafers and sapphire fibers. As a whole, the ablation equality is good for use.

Original language	English
Title of host publication	Micromachining and Microfabrication Process Technology XV
DOIs	https://doi.org/10.1117/12.841098
State	Published - 2010
Externally published	Yes
Event	Micromachining and Microfabrication Process Technology XV - San Francisco, CA, United States Duration: 26 Jan 2010 → 26 Jan 2010

Publication series

Name	Proceedings of SPIE - The International Society for Optical Engineering
Volume	7590
ISSN (Print)	0277-786X

Conference

Conference	Micromachining and Microfabrication Process Technology XV
Country/Territory	United States
City	San Francisco, CA
Period	26/01/10 → 26/01/10

Keywords

157nm laser
Deep ultraviolet laser
Micro-structuring
Sapphire fiber
Sapphire wafer

Access to Document

10.1117/12.841098

Cite this

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title = "Laser micro-structuring of sapphire wafer and fiber",

abstract = "Currently, sapphire is widely used in the field of optoelectronic devices and micro-mechanical components. One of the problems in using sapphire is the difficulty in cutting and micro-structuring due to the hardness of sapphire itself. In this paper, laser micromachining characteristics of sapphire are investigated using 157nm DUV laser micro-ablation system. Under laser fluence of 3-4 J/cm2, the maximum ablation rate could reach to 400nm/s. For 3D laser ablation, it is necessary to select a proper combination of process parameters. Several 3D micro-structures are produced in sapphire wafers and sapphire fibers. As a whole, the ablation equality is good for use.",

keywords = "157nm laser, Deep ultraviolet laser, Micro-structuring, Sapphire fiber, Sapphire wafer",

author = "Yutang Dai and Gang Xu and Jianlei Cui and Fan Bai",

year = "2010",

doi = "10.1117/12.841098",

language = "英语",

isbn = "9780819479860",

series = "Proceedings of SPIE - The International Society for Optical Engineering",

booktitle = "Micromachining and Microfabrication Process Technology XV",

note = "Micromachining and Microfabrication Process Technology XV ; Conference date: 26-01-2010 Through 26-01-2010",

}

Dai, Y, Xu, G, Cui, J & Bai, F 2010, Laser micro-structuring of sapphire wafer and fiber. in Micromachining and Microfabrication Process Technology XV., 75900O, Proceedings of SPIE - The International Society for Optical Engineering, vol. 7590, Micromachining and Microfabrication Process Technology XV, San Francisco, CA, United States, 26/01/10. https://doi.org/10.1117/12.841098

TY - GEN

T1 - Laser micro-structuring of sapphire wafer and fiber

AU - Dai, Yutang

AU - Xu, Gang

AU - Cui, Jianlei

AU - Bai, Fan

PY - 2010

Y1 - 2010

N2 - Currently, sapphire is widely used in the field of optoelectronic devices and micro-mechanical components. One of the problems in using sapphire is the difficulty in cutting and micro-structuring due to the hardness of sapphire itself. In this paper, laser micromachining characteristics of sapphire are investigated using 157nm DUV laser micro-ablation system. Under laser fluence of 3-4 J/cm2, the maximum ablation rate could reach to 400nm/s. For 3D laser ablation, it is necessary to select a proper combination of process parameters. Several 3D micro-structures are produced in sapphire wafers and sapphire fibers. As a whole, the ablation equality is good for use.

AB - Currently, sapphire is widely used in the field of optoelectronic devices and micro-mechanical components. One of the problems in using sapphire is the difficulty in cutting and micro-structuring due to the hardness of sapphire itself. In this paper, laser micromachining characteristics of sapphire are investigated using 157nm DUV laser micro-ablation system. Under laser fluence of 3-4 J/cm2, the maximum ablation rate could reach to 400nm/s. For 3D laser ablation, it is necessary to select a proper combination of process parameters. Several 3D micro-structures are produced in sapphire wafers and sapphire fibers. As a whole, the ablation equality is good for use.

KW - 157nm laser

KW - Deep ultraviolet laser

KW - Micro-structuring

KW - Sapphire fiber

KW - Sapphire wafer

UR - https://www.scopus.com/pages/publications/77951528680

U2 - 10.1117/12.841098

DO - 10.1117/12.841098

M3 - 会议稿件

AN - SCOPUS:77951528680

SN - 9780819479860

T3 - Proceedings of SPIE - The International Society for Optical Engineering

BT - Micromachining and Microfabrication Process Technology XV

T2 - Micromachining and Microfabrication Process Technology XV

Y2 - 26 January 2010 through 26 January 2010

ER -

Laser micro-structuring of sapphire wafer and fiber

Abstract

Publication series

Conference

Keywords

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