Large enhancement of energy storage density in (Pb0.92La0.08)(Zr0.65Ti0.35)O3/PbZrO3 multilayer thin film

Buwei Sun; Mengyao Guo; Ming Wu; Zhuang Ma; Weiwei Gao; Haonan Sun; Xiaojie Lou

doi:10.1016/j.ceramint.2019.06.266

Large enhancement of energy storage density in (Pb_0.92La_0.08)(Zr_0.65Ti_0.35)O₃/PbZrO₃ multilayer thin film

Buwei Sun
, Mengyao Guo
, Ming Wu
, Zhuang Ma
, Weiwei Gao
, Haonan Sun
, Xiaojie Lou

Frontier Institute of Science and Technology

Xi'an Jiaotong University
National University of Singapore

Research output: Contribution to journal › Article › peer-review

53 Scopus citations

Abstract

(Pb_0.92La_0.08)(Zr_0.65Ti_0.35)O₃ (PLZT), PbZrO₃ (PZO) films, and type A and type B PLZT/PZO multilayer thin films were deposited on Pt(111)/TiO_x/SiO₂/Si substrates by sol-gel method, where type A and type B films stand for PLZT/PZO/PLZT/PZO/PLZT/PZO and PLZT/PZO/PLZT/PLZT/PZO/PLZT multilayer thin film, respectively. Compared to the PLZT and PZO film, enhanced breakdown field strength and improved energy storage density were obtained in type A and B multilayer thin films. A superior energy storage density of 29.7 J/cm³ with the energy storage efficiency of 50.8% was achieved in type B multilayer thin film, corresponding to 81% enhancement compared with the energy storage density of PLZT films (16.4 J/cm³). Additionally, the type B multilayer thin film exhibits a good thermal stability up to 160 °C and excellent fatigue endurance after 10⁷ charging-discharging cycles. The enhanced energy storage performance of type B multilayer thin film shows promise and may stimulate further researches on energy storage applications of multilayer dielectric thin films.

Original language	English
Pages (from-to)	20046-20050
Number of pages	5
Journal	Ceramics International
Volume	45
Issue number	16
DOIs	https://doi.org/10.1016/j.ceramint.2019.06.266
State	Published - Nov 2019

Keywords

Antiferroelectrics
Energy storage
Multilayer thin films
Relaxor ferroelectrics

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10.1016/j.ceramint.2019.06.266

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@article{7b832853612d44e5b064519cf99ab296,

title = "Large enhancement of energy storage density in (Pb0.92La0.08)(Zr0.65Ti0.35)O3/PbZrO3 multilayer thin film",

abstract = "(Pb0.92La0.08)(Zr0.65Ti0.35)O3 (PLZT), PbZrO3 (PZO) films, and type A and type B PLZT/PZO multilayer thin films were deposited on Pt(111)/TiOx/SiO2/Si substrates by sol-gel method, where type A and type B films stand for PLZT/PZO/PLZT/PZO/PLZT/PZO and PLZT/PZO/PLZT/PLZT/PZO/PLZT multilayer thin film, respectively. Compared to the PLZT and PZO film, enhanced breakdown field strength and improved energy storage density were obtained in type A and B multilayer thin films. A superior energy storage density of 29.7 J/cm3 with the energy storage efficiency of 50.8\% was achieved in type B multilayer thin film, corresponding to 81\% enhancement compared with the energy storage density of PLZT films (16.4 J/cm3). Additionally, the type B multilayer thin film exhibits a good thermal stability up to 160 °C and excellent fatigue endurance after 107 charging-discharging cycles. The enhanced energy storage performance of type B multilayer thin film shows promise and may stimulate further researches on energy storage applications of multilayer dielectric thin films.",

keywords = "Antiferroelectrics, Energy storage, Multilayer thin films, Relaxor ferroelectrics",

author = "Buwei Sun and Mengyao Guo and Ming Wu and Zhuang Ma and Weiwei Gao and Haonan Sun and Xiaojie Lou",

note = "Publisher Copyright: {\textcopyright} 2019 Elsevier Ltd and Techna Group S.r.l.",

year = "2019",

month = nov,

doi = "10.1016/j.ceramint.2019.06.266",

language = "英语",

volume = "45",

pages = "20046--20050",

journal = "Ceramics International",

issn = "0272-8842",

publisher = "Elsevier Ltd",

number = "16",

}

TY - JOUR

T1 - Large enhancement of energy storage density in (Pb0.92La0.08)(Zr0.65Ti0.35)O3/PbZrO3 multilayer thin film

AU - Sun, Buwei

AU - Guo, Mengyao

AU - Wu, Ming

AU - Ma, Zhuang

AU - Gao, Weiwei

AU - Sun, Haonan

AU - Lou, Xiaojie

PY - 2019/11

Y1 - 2019/11

N2 - (Pb0.92La0.08)(Zr0.65Ti0.35)O3 (PLZT), PbZrO3 (PZO) films, and type A and type B PLZT/PZO multilayer thin films were deposited on Pt(111)/TiOx/SiO2/Si substrates by sol-gel method, where type A and type B films stand for PLZT/PZO/PLZT/PZO/PLZT/PZO and PLZT/PZO/PLZT/PLZT/PZO/PLZT multilayer thin film, respectively. Compared to the PLZT and PZO film, enhanced breakdown field strength and improved energy storage density were obtained in type A and B multilayer thin films. A superior energy storage density of 29.7 J/cm3 with the energy storage efficiency of 50.8% was achieved in type B multilayer thin film, corresponding to 81% enhancement compared with the energy storage density of PLZT films (16.4 J/cm3). Additionally, the type B multilayer thin film exhibits a good thermal stability up to 160 °C and excellent fatigue endurance after 107 charging-discharging cycles. The enhanced energy storage performance of type B multilayer thin film shows promise and may stimulate further researches on energy storage applications of multilayer dielectric thin films.

AB - (Pb0.92La0.08)(Zr0.65Ti0.35)O3 (PLZT), PbZrO3 (PZO) films, and type A and type B PLZT/PZO multilayer thin films were deposited on Pt(111)/TiOx/SiO2/Si substrates by sol-gel method, where type A and type B films stand for PLZT/PZO/PLZT/PZO/PLZT/PZO and PLZT/PZO/PLZT/PLZT/PZO/PLZT multilayer thin film, respectively. Compared to the PLZT and PZO film, enhanced breakdown field strength and improved energy storage density were obtained in type A and B multilayer thin films. A superior energy storage density of 29.7 J/cm3 with the energy storage efficiency of 50.8% was achieved in type B multilayer thin film, corresponding to 81% enhancement compared with the energy storage density of PLZT films (16.4 J/cm3). Additionally, the type B multilayer thin film exhibits a good thermal stability up to 160 °C and excellent fatigue endurance after 107 charging-discharging cycles. The enhanced energy storage performance of type B multilayer thin film shows promise and may stimulate further researches on energy storage applications of multilayer dielectric thin films.

KW - Antiferroelectrics

KW - Energy storage

KW - Multilayer thin films

KW - Relaxor ferroelectrics

UR - https://www.scopus.com/pages/publications/85067853632

U2 - 10.1016/j.ceramint.2019.06.266

DO - 10.1016/j.ceramint.2019.06.266

M3 - 文章

AN - SCOPUS:85067853632

SN - 0272-8842

VL - 45

SP - 20046

EP - 20050

JO - Ceramics International

JF - Ceramics International

IS - 16

ER -

Large enhancement of energy storage density in (Pb_0.92La_0.08)(Zr_0.65Ti_0.35)O₃/PbZrO₃ multilayer thin film

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