Laminated Busbar Design for 10kV SiC MOSFET Module

This paper proposes a low-inductance laminated busbar with an integrated DC-link capacitor bank for 10 kV/125 A SiC half-bridge modules. The busbar system comprises two optimized sections: a power module interconnection busbar that achieves low parasitic inductance (14.41 nH with the upper switch on and 9.59 nH with the lower switch on) through mutually canceling topologies; and a capacitor bank busbar arranged in a 2P6S configuration using TDK B25620 capacitors, exhibiting a loop inductance of 13.70 nH. COMSOL electrostatic simulations confirm the dielectric integrity of the design, revealing a maximum surface electric field strength of 42.19 kV/mm at critical interfaces, which is only 21.4% of the 197 kV/mm breakdown strength of the polyimide insulation material. Double-pulse testing demonstrates excellent transient performance, validating the overall effectiveness of the proposed busbar system.