Ion reaction tunable ON/OFF ratio of vertically oriented Zn-Al layered-double-hydroxide nanosheets based memristor

Feng Yang; Mayameen S. Kadhim; Mashair Babiker; Hosameldeen Elshekh; Wentao Hou; Guoqiang Huang; Yong Zhang; Yong Zhao; Bai Sun

doi:10.1016/j.mtcomm.2019.100573

Ion reaction tunable ON/OFF ratio of vertically oriented Zn-Al layered-double-hydroxide nanosheets based memristor

Feng Yang
, Mayameen S. Kadhim
, Mashair Babiker
, Hosameldeen Elshekh
, Wentao Hou
, Guoqiang Huang
, Yong Zhang
, Yong Zhao
, Bai Sun

Southwest Jiaotong University
Nanjing University of Aeronautics and Astronautics

Research output: Contribution to journal › Article › peer-review

10 Scopus citations

Abstract

Resistance random access memory (RRAM) has attracted considerable scientific and industrial attention as a next-generation data memory system. In this work, zinc–aluminium layered double hydroxide Zn-Al (LDH) films were sequentially prepared by direct deposition on alumina (Al) foil substrate. Further, a sandwich Ag/Zn-Al (LDH)/Al structure was prepared by printing Ag as a top electrode. The device displays a variable OFF/ON resistance ratio (from 10⁴ to 10²) due to the stacked, layered structure and interaction of Ag ion and anion inside Zn-Al (LDH) layer. To explain the conductive mechanism, the formation and rupture of nanoscale Ag filament inside the Zn-Al (LDH) vertical nanosheets are recommended to describe the memory performance. This work indicates that Zn-Al (LDH) vertical nanosheets have great potential to be used in flexible memory devices in the near future.

Original language	English
Article number	100573
Journal	Materials Today Communications
Volume	20
DOIs	https://doi.org/10.1016/j.mtcomm.2019.100573
State	Published - Sep 2019
Externally published	Yes

Keywords

Memory device
Multistage switching
Resistive switching
Zn-Al (LDH)

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10.1016/j.mtcomm.2019.100573

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title = "Ion reaction tunable ON/OFF ratio of vertically oriented Zn-Al layered-double-hydroxide nanosheets based memristor",

abstract = "Resistance random access memory (RRAM) has attracted considerable scientific and industrial attention as a next-generation data memory system. In this work, zinc–aluminium layered double hydroxide Zn-Al (LDH) films were sequentially prepared by direct deposition on alumina (Al) foil substrate. Further, a sandwich Ag/Zn-Al (LDH)/Al structure was prepared by printing Ag as a top electrode. The device displays a variable OFF/ON resistance ratio (from 104 to 102) due to the stacked, layered structure and interaction of Ag ion and anion inside Zn-Al (LDH) layer. To explain the conductive mechanism, the formation and rupture of nanoscale Ag filament inside the Zn-Al (LDH) vertical nanosheets are recommended to describe the memory performance. This work indicates that Zn-Al (LDH) vertical nanosheets have great potential to be used in flexible memory devices in the near future.",

keywords = "Memory device, Multistage switching, Resistive switching, Zn-Al (LDH)",

author = "Feng Yang and Kadhim, \{Mayameen S.\} and Mashair Babiker and Hosameldeen Elshekh and Wentao Hou and Guoqiang Huang and Yong Zhang and Yong Zhao and Bai Sun",

note = "Publisher Copyright: {\textcopyright} 2019 Elsevier Ltd",

year = "2019",

month = sep,

doi = "10.1016/j.mtcomm.2019.100573",

language = "英语",

volume = "20",

journal = "Materials Today Communications",

issn = "2352-4928",

publisher = "Elsevier Ltd",

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TY - JOUR

T1 - Ion reaction tunable ON/OFF ratio of vertically oriented Zn-Al layered-double-hydroxide nanosheets based memristor

AU - Yang, Feng

AU - Kadhim, Mayameen S.

AU - Babiker, Mashair

AU - Elshekh, Hosameldeen

AU - Hou, Wentao

AU - Huang, Guoqiang

AU - Zhang, Yong

AU - Zhao, Yong

AU - Sun, Bai

PY - 2019/9

Y1 - 2019/9

N2 - Resistance random access memory (RRAM) has attracted considerable scientific and industrial attention as a next-generation data memory system. In this work, zinc–aluminium layered double hydroxide Zn-Al (LDH) films were sequentially prepared by direct deposition on alumina (Al) foil substrate. Further, a sandwich Ag/Zn-Al (LDH)/Al structure was prepared by printing Ag as a top electrode. The device displays a variable OFF/ON resistance ratio (from 104 to 102) due to the stacked, layered structure and interaction of Ag ion and anion inside Zn-Al (LDH) layer. To explain the conductive mechanism, the formation and rupture of nanoscale Ag filament inside the Zn-Al (LDH) vertical nanosheets are recommended to describe the memory performance. This work indicates that Zn-Al (LDH) vertical nanosheets have great potential to be used in flexible memory devices in the near future.

AB - Resistance random access memory (RRAM) has attracted considerable scientific and industrial attention as a next-generation data memory system. In this work, zinc–aluminium layered double hydroxide Zn-Al (LDH) films were sequentially prepared by direct deposition on alumina (Al) foil substrate. Further, a sandwich Ag/Zn-Al (LDH)/Al structure was prepared by printing Ag as a top electrode. The device displays a variable OFF/ON resistance ratio (from 104 to 102) due to the stacked, layered structure and interaction of Ag ion and anion inside Zn-Al (LDH) layer. To explain the conductive mechanism, the formation and rupture of nanoscale Ag filament inside the Zn-Al (LDH) vertical nanosheets are recommended to describe the memory performance. This work indicates that Zn-Al (LDH) vertical nanosheets have great potential to be used in flexible memory devices in the near future.

KW - Memory device

KW - Multistage switching

KW - Resistive switching

KW - Zn-Al (LDH)

UR - https://www.scopus.com/pages/publications/85072545625

U2 - 10.1016/j.mtcomm.2019.100573

DO - 10.1016/j.mtcomm.2019.100573

M3 - 文章

AN - SCOPUS:85072545625

SN - 2352-4928

VL - 20

JO - Materials Today Communications

JF - Materials Today Communications

M1 - 100573

ER -

Ion reaction tunable ON/OFF ratio of vertically oriented Zn-Al layered-double-hydroxide nanosheets based memristor

Abstract

Keywords

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