Investigation of structures and properties of dc magnetic control reactive sputtering deposited Ta2O5 electret films

Wu Shixiang; Chen Shifang; Zhang Zhanqing; Lei Qingquan

doi:10.1109/ISE.1994.515220

Investigation of structures and properties of dc magnetic control reactive sputtering deposited Ta₂O₅ electret films

Wu Shixiang
, Chen Shifang
, Zhang Zhanqing
, Lei Qingquan

Harbin Institute of Technology

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

By studying the effects of sputtering current and pressure of gas on the growth rate and quality of Ta₂O₅ thin films, we have obtained the following optimum technical parameters: Sputtering current-0.6 A; oxygen pressure lower than 3 Pa (for such conditions, the sputtering rate is greater than 64 nm/min.); even and homogeneous film. Using XRD, TEM and SEM measurements, the change of film structure was observed before and after annealing at high temperature. Using XPS, the chemical structure and composition of the Ta₂O₅ surface was analysed. It is experimentally shown that this film after annealling possesses multicrystalline structure containing Ta₂O₅ and TaO along (0001) as a textured direction, and excellent electrical, chemical, piezoelectric and sensitive properties.

Original language	English
Title of host publication	8th International Symposium on Electrets, ISE 1994 - Proceedings
Editors	J. Lewiner, C. Alquie, D. Morisseau
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	736-741
Number of pages	6
ISBN (Electronic)	0780319400, 9780780319400
DOIs	https://doi.org/10.1109/ISE.1994.515220
State	Published - 1994
Externally published	Yes
Event	8th International Symposium on Electrets, ISE 1994 - Paris, France Duration: 7 Sep 1994 → 9 Sep 1994

Publication series

Name	8th International Symposium on Electrets, ISE 1994 - Proceedings

Conference

Conference	8th International Symposium on Electrets, ISE 1994
Country/Territory	France
City	Paris
Period	7/09/94 → 9/09/94

Access to Document

10.1109/ISE.1994.515220

Cite this

Shixiang, W., Shifang, C., Zhanqing, Z., & Qingquan, L. (1994). Investigation of structures and properties of dc magnetic control reactive sputtering deposited Ta₂O₅ electret films. In J. Lewiner, C. Alquie, & D. Morisseau (Eds.), 8th International Symposium on Electrets, ISE 1994 - Proceedings (pp. 736-741). Article 515220 (8th International Symposium on Electrets, ISE 1994 - Proceedings). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/ISE.1994.515220

Shixiang, Wu ; Shifang, Chen ; Zhanqing, Zhang et al. / Investigation of structures and properties of dc magnetic control reactive sputtering deposited Ta₂O₅ electret films. 8th International Symposium on Electrets, ISE 1994 - Proceedings. editor / J. Lewiner ; C. Alquie ; D. Morisseau. Institute of Electrical and Electronics Engineers Inc., 1994. pp. 736-741 (8th International Symposium on Electrets, ISE 1994 - Proceedings).

@inproceedings{265b09b7b8db4c2f92ecf42484cef7de,

title = "Investigation of structures and properties of dc magnetic control reactive sputtering deposited Ta2O5 electret films",

abstract = "By studying the effects of sputtering current and pressure of gas on the growth rate and quality of Ta2O5 thin films, we have obtained the following optimum technical parameters: Sputtering current-0.6 A; oxygen pressure lower than 3 Pa (for such conditions, the sputtering rate is greater than 64 nm/min.); even and homogeneous film. Using XRD, TEM and SEM measurements, the change of film structure was observed before and after annealing at high temperature. Using XPS, the chemical structure and composition of the Ta2O5 surface was analysed. It is experimentally shown that this film after annealling possesses multicrystalline structure containing Ta2O5 and TaO along (0001) as a textured direction, and excellent electrical, chemical, piezoelectric and sensitive properties.",

author = "Wu Shixiang and Chen Shifang and Zhang Zhanqing and Lei Qingquan",

note = "Publisher Copyright: {\textcopyright} 1994 IEEE.; 8th International Symposium on Electrets, ISE 1994 ; Conference date: 07-09-1994 Through 09-09-1994",

year = "1994",

doi = "10.1109/ISE.1994.515220",

language = "英语",

series = "8th International Symposium on Electrets, ISE 1994 - Proceedings",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

pages = "736--741",

editor = "J. Lewiner and C. Alquie and D. Morisseau",

booktitle = "8th International Symposium on Electrets, ISE 1994 - Proceedings",

}

Shixiang, W, Shifang, C, Zhanqing, Z & Qingquan, L 1994, Investigation of structures and properties of dc magnetic control reactive sputtering deposited Ta₂O₅ electret films. in J Lewiner, C Alquie & D Morisseau (eds), 8th International Symposium on Electrets, ISE 1994 - Proceedings., 515220, 8th International Symposium on Electrets, ISE 1994 - Proceedings, Institute of Electrical and Electronics Engineers Inc., pp. 736-741, 8th International Symposium on Electrets, ISE 1994, Paris, France, 7/09/94. https://doi.org/10.1109/ISE.1994.515220

Investigation of structures and properties of dc magnetic control reactive sputtering deposited Ta₂O₅ electret films. / Shixiang, Wu; Shifang, Chen; Zhanqing, Zhang et al.
8th International Symposium on Electrets, ISE 1994 - Proceedings. ed. / J. Lewiner; C. Alquie; D. Morisseau. Institute of Electrical and Electronics Engineers Inc., 1994. p. 736-741 515220 (8th International Symposium on Electrets, ISE 1994 - Proceedings).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Investigation of structures and properties of dc magnetic control reactive sputtering deposited Ta2O5 electret films

AU - Shixiang, Wu

AU - Shifang, Chen

AU - Zhanqing, Zhang

AU - Qingquan, Lei

PY - 1994

Y1 - 1994

N2 - By studying the effects of sputtering current and pressure of gas on the growth rate and quality of Ta2O5 thin films, we have obtained the following optimum technical parameters: Sputtering current-0.6 A; oxygen pressure lower than 3 Pa (for such conditions, the sputtering rate is greater than 64 nm/min.); even and homogeneous film. Using XRD, TEM and SEM measurements, the change of film structure was observed before and after annealing at high temperature. Using XPS, the chemical structure and composition of the Ta2O5 surface was analysed. It is experimentally shown that this film after annealling possesses multicrystalline structure containing Ta2O5 and TaO along (0001) as a textured direction, and excellent electrical, chemical, piezoelectric and sensitive properties.

AB - By studying the effects of sputtering current and pressure of gas on the growth rate and quality of Ta2O5 thin films, we have obtained the following optimum technical parameters: Sputtering current-0.6 A; oxygen pressure lower than 3 Pa (for such conditions, the sputtering rate is greater than 64 nm/min.); even and homogeneous film. Using XRD, TEM and SEM measurements, the change of film structure was observed before and after annealing at high temperature. Using XPS, the chemical structure and composition of the Ta2O5 surface was analysed. It is experimentally shown that this film after annealling possesses multicrystalline structure containing Ta2O5 and TaO along (0001) as a textured direction, and excellent electrical, chemical, piezoelectric and sensitive properties.

UR - https://www.scopus.com/pages/publications/85063400727

U2 - 10.1109/ISE.1994.515220

DO - 10.1109/ISE.1994.515220

M3 - 会议稿件

AN - SCOPUS:85063400727

T3 - 8th International Symposium on Electrets, ISE 1994 - Proceedings

SP - 736

EP - 741

BT - 8th International Symposium on Electrets, ISE 1994 - Proceedings

A2 - Lewiner, J.

A2 - Alquie, C.

A2 - Morisseau, D.

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 8th International Symposium on Electrets, ISE 1994

Y2 - 7 September 1994 through 9 September 1994

ER -

Shixiang W, Shifang C, Zhanqing Z, Qingquan L. Investigation of structures and properties of dc magnetic control reactive sputtering deposited Ta₂O₅ electret films. In Lewiner J, Alquie C, Morisseau D, editors, 8th International Symposium on Electrets, ISE 1994 - Proceedings. Institute of Electrical and Electronics Engineers Inc. 1994. p. 736-741. 515220. (8th International Symposium on Electrets, ISE 1994 - Proceedings). doi: 10.1109/ISE.1994.515220